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Advanced Ta-Based Diffusion Barriers for Cu Interconnects

Autor Rene Hubner
en Limba Engleză Paperback – 16 mar 2009
During the last few years, copper has become the standard metallisation material for on-chip interconnects in high-performance microprocessors. Compared to the previously used aluminium, copper shows not only a lower resistivity, but also significantly improved electromigration resistance. Copper ions, however, are very mobile in silicon and many dielectric materials under electrical and thermal bias. Thus, barrier layers are needed to prevent Cu diffusion into the insulating layers surrounding the metallic interconnects. Since Ta-based compounds are characterized by a high thermal stability, pure Ta films or layer stacks consisting of Ta and TaN are used for such barriers. The continuous scaling down of the interconnect dimensions and, therefore, the essential decrease in the barrier layer thickness coupled with the replacement of silicon oxide by advanced low-k dielectrics demand further improvements of the diffusion barrier performance. It is the aim of this book to carry out microstructure and functional property investigations for advanced, high-performance Tabased diffusion barriers (Ta-TaN layer stacks and Ta-Si-N single layers) before and after annealing to compare their thermal stabilities and to probe the corresponding failure mechanisms. For the Ta-TaN barriers, these studies are undertaken for a range of layer sequences, while for the Ta-Si-N barriers a variety of films with different chemical compositions are analysed.
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Specificații

ISBN-13: 9781604564518
ISBN-10: 1604564512
Pagini: 102
Ilustrații: tables & charts
Dimensiuni: 153 x 227 x 8 mm
Greutate: 0.19 kg
Editura: Nova Science Publishers Inc

Cuprins

Preface; Introduction; Experimental Details; Microstructure and Functional Properties of as-Deposited Ta-Based Diffusion Barriers; Thermal Stability of Ta-Based Diffusion Barriers in SiO2; Trace-Analytical Techniques for a Sensitive Proof of Cu Diffusion; Thermal Stability of Ta-Based Diffusion Barriers on Silicon and Barrier Failure Mechanisms; Conclusion; Index.