Advancing Silicon Carbide Electronics Technology II
Editat de Konstantinos Zekentes, Konstantin Vasilevskiyen Limba Engleză Paperback – 14 mar 2020
Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).
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Specificații
ISBN-13: 9781644900666
ISBN-10: 1644900661
Pagini: 294
Dimensiuni: 149 x 226 x 22 mm
Greutate: 0.4 kg
Editura: Materials Research Forum LLC
ISBN-10: 1644900661
Pagini: 294
Dimensiuni: 149 x 226 x 22 mm
Greutate: 0.4 kg
Editura: Materials Research Forum LLC
Descriere
The book presents an in-depth review and analysis of Silicon Carbide device processing. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).