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Amorphous and Crystalline Silicon Carbide II: Recent Developments Proceedings of the 2nd International Conference, Santa Clara, CA, December 15—16, 1988 de Mahmud M. Rahman

Amorphous and Crystalline Silicon Carbide II: Recent Developments Proceedings of the 2nd International Conference, Santa Clara, CA, December 15—16, 1988: Springer Proceedings in Physics, cartea 43

Editat de Mahmud M. Rahman, Cary Y. -W. Yang, Gary L. Harris
en Limba Engleză Paperback – 23 noi 2011
This volume contains written versions of the papers presented at the Second Inter­ national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem­ ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in­ ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.
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Specificații

ISBN-13: 9783642750502
ISBN-10: 3642750508
Pagini: 248
Ilustrații: X, 232 p.
Dimensiuni: 170 x 242 x 13 mm
Greutate: 0.4 kg
Ediția:Softcover reprint of the original 1st ed. 1989
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seria Springer Proceedings in Physics

Locul publicării:Berlin, Heidelberg, Germany

Public țintă

Research

Cuprins

I Growth of Crystalline Silicon Carbide.- Crystalline SiC on Si and High Temperature Operational Devices (With 7 Figures).- Heteroepitaxial Growth of Cubic SiC on a Si Substrate Using the Si2H6-C2H2-H2 System (With 6 Figures).- Chemical Vapor Deposition of Single Crystal ?-SiC (With 4 Figures).- ?-Silicon Carbide Prepared by Rapid Thermal Chemical Vapor Deposition (With 4 Figures).- Single Crystal Growth of 6H-SiC by a Vacuum Sublimation Method, and Blue LEDs (With 17 Figures).- Polytype Change of Silicon Carbide at High Temperatures (With 3 Figures).- Epitaxial Growth of (SiC)xGe1-x on Silicon Substrates (With 1 Figure).- One-Dimensional Fluid Mechanics/Kinetics Modeling of the CVD of SiC in a Vertical Reactor.- II Growth of Amorphous, Microcrystalline, and Polycrystalline Silicon Carbide.- Properties of a-SiC:H Films Prepared with a Field-Enhanced RF Glow-Discharge System (With 4 Figures).- Preparation of Microcrystalline Silicon Carbide Thin Films for the Emitter of Si HBTs (With 4 Figures).- High-Quality Microcrystalline SiC Films Fabricated by the Controlled Plasma Magnetron Method (With 10 Figures).- Electron-Cyclotron-Resonance Plasma Deposition of Carbon onto Silicon (With 8 Figures).- Preparation and Characterization of Amorphous SiC Film by a Liquid Route (With 2 Figures).- III Characterization of Silicon Carbide.- Gap States of Highly Photosensitive a-SiC:H (With 5 Figures).- X-Ray Photoelectron Spectroscopy Study of Hydrogenated Amorphous Silicon Carbide Films (With 4 Figures).- Doping-Induced Structural Change in Amorphous Silicon (Carbon) Hydrogen Alloy (With 6 Figures).- Small Angle X-Ray Scattering from Microvoids in the a-SiC:H Alloy (With 3 Figures).- Studies on Carrier Lifetime and Deep Levels in CVD-Grown 3C-SiC by Photoconductivity and MicrowaveAbsorption (With 8 Figures).- ESR Study of Defects in Epitaxially Grown 3C-SiC (With 4 Figures).- Time-Resolved Photoluminescence Studies of Undoped and Al-Doped Cubic SiC (With 3 Figures).- Photoluminescence Imaging of Spatial Distribution of Recombination Centers in Cubic SiC (With 3 Figures).- Stress-Induced Defects vs Growth Faults in CVD-Grown SiC.- Crystalline Defects in ?-SiC as Revealed by a NaOH-KOH Eutectic Etch (With 6 Figures).- Ellipsometric Study of Cubic SiC.- Photoluminescence and Transmission Electron Microscopy of Defects in SiC Grown on Si.- Vibrational and Electrical Properties of n and p Doped a-SiC:H Films.- IV Growth and Applications of Diamond Thin Films.- Current Status of Diamond Thin Films.- New Material and Device Design Considerations for High-Power Electronics.- Active and Passive Electronic Applications of CVD Diamond Films.- V Surfaces and Interfaces of Silicon Carbide.- Surface and Interface Studies of SiC (Buffer-Layer)/Si(100) (With 6 Figures).- The Influence of Hydrogen on the Transition from Amorphous to Crystalline Structure in Plasma Deposition of Silicon and Alloys.- Microstructure of the a-Si1-xCx:H/c-Si Interface (With 2 Figures).- Atomic Layer Control in Cubic SiC Growth Utilizing Surface Superstructure in Gas Source MBE (With 7 Figures).- On the Stability of a Cr + C Phase on (100) 3C SiC at Elevated Temperatures.- VI Processing and Device Applications of Silicon Carbide.- Physics and Applications of Amorphous Silicon Carbide (With 6 Figures).- ?-SiC on Titanium Carbide for Solid State Devices (With 12 Figures).- Fabrication of MOSFETs on ?-SiC Single Crystalline Layers Grown on Si(100) Substrates (With 6 Figures).- A High Transconductance ?-SiC Buried-Gate Junction Field Effect Transistor (With 5 Figures).- SiC as aPotential FET Gate Insulator (With 8 Figures).- Applications of High Purity SiC Prepared by Chemical Vapor Deposition (With 12 Figures).- SiC/Si HBT Using Polycrystalline SiC Layers Prepared by Electron Beam Evaporation (With 5 Figures).- Thin Film Transistors Using Polycrystalline SiC (With 8 Figures).- Mechanisms in Reactive Ion Etching of Silicon Carbide Thin Films (With 6 Figures).- W/SiC Contact Resistance at Elevated Temperatures (With 2 Figures).- Application of Excimer Laser Processing in SiC Device Fabrication.- Index of Contributors.