Defects in Optoelectronic Materials
Autor Kazumi Wadaen Limba Engleză Hardback – 6 noi 2001
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Specificații
ISBN-13: 9789056997144
ISBN-10: 9056997149
Pagini: 426
Dimensiuni: 152 x 229 mm
Greutate: 0.75 kg
Ediția:1
Editura: CRC Press
Colecția CRC Press
ISBN-10: 9056997149
Pagini: 426
Dimensiuni: 152 x 229 mm
Greutate: 0.75 kg
Ediția:1
Editura: CRC Press
Colecția CRC Press
Public țintă
UndergraduateCuprins
Saturation of Free Carrier Concentration in Semiconductors
The Amphoteric Defect Model
Maximum Doping Limits in GaAs
Other Group III-V Semiconductors
Group III-Nitrides
Group II-VI Semiconductors
Group I-III-VI2 Ternaries
Other Semiconductors
Unintentional Doping
Amphoteric Dopants
Point Defect Formation Near Surfaces
Point Defect Equilibria near the Semiconductor Surfaces
Point Defect Formation Kinetics in the Sub-Surface Layer - Bottleneck Effect
Bottleneck Related Phenomena
Optical Characterization of Plasma Etching Induced Damage
Ion-assisted Etching: Understanding the Problem
Optical Damage Assessment Techniques: Choosing a Method
The Range of Ion-Induced Damage
Dry Etch Damage in Widegap Semiconductor Materials
Damage in the InGaA1N System
Damage in SiC
Damage in II-VI Compounds
Generation, Removal, and Passivation of Plasma Process Induced Defects
Dry Etching Systems
Plasma Process Indu
The Amphoteric Defect Model
Maximum Doping Limits in GaAs
Other Group III-V Semiconductors
Group III-Nitrides
Group II-VI Semiconductors
Group I-III-VI2 Ternaries
Other Semiconductors
Unintentional Doping
Amphoteric Dopants
Point Defect Formation Near Surfaces
Point Defect Equilibria near the Semiconductor Surfaces
Point Defect Formation Kinetics in the Sub-Surface Layer - Bottleneck Effect
Bottleneck Related Phenomena
Optical Characterization of Plasma Etching Induced Damage
Ion-assisted Etching: Understanding the Problem
Optical Damage Assessment Techniques: Choosing a Method
The Range of Ion-Induced Damage
Dry Etch Damage in Widegap Semiconductor Materials
Damage in the InGaA1N System
Damage in SiC
Damage in II-VI Compounds
Generation, Removal, and Passivation of Plasma Process Induced Defects
Dry Etching Systems
Plasma Process Indu
Descriere
Defects in Optoelectronic Materials bridges the gap between device process engineers and defect physicists by describing current problems in device processing and current understanding of these defects based on defect physics.