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Diffusion in Semiconductors: Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology - New Series, cartea 33A

Contribuţii de C.E. Allen, D.L. Beke, H. Bracht, C.M. Bruff, M.B. Dutt, G. Erdelyi, P. Gas, F.M. d'Heurle, G.E. Murch, E.G. Seebauer, B.L. Sharma, N.A. Stolwijk
en Limba Engleză Mixed media product – 18 mar 1998
Subvolume A of two subvolumes on Diffusion in Semiconductors and Non-Metallic Solids consists of a comprehensive and critical compilation of data for the following materials and properties: diffusion in silicon, germanium and their alloys, diffusion in compound semiconductors, diffusion in silicides, chemical diffusion in bulk inhomogeneous semiconductors, grain-boundary and dislocation diffusion in semiconductors and silicides and surface diffusion on semiconductors. Although most of the silicides are not semiconducting, this chapter is included here because a number of them have become integrated in the Si technology and because they were not covered in the previous volume III/26 on diffusion in metallic substances. Subvolume A contains a CD-ROM.
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Specificații

ISBN-13: 9783540609643
ISBN-10: 3540609644
Ilustrații: XIII, 476 p. With CD-ROM.
Dimensiuni: 193 x 270 mm
Greutate: 1.54 kg
Ediția:1998
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seriile Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology - New Series, Condensed Matter

Locul publicării:Berlin, Heidelberg, Germany

Public țintă

Research

Cuprins

From the Contents: Atomic Fluxes.- Equations for diffusion.- Atomic mechanisms of diffusion.- Methods of measuring diffusion coefficients.- Temperature, pressure and mass dependence of diffusion.- Diffusion in elementary semiconductors.- Diffusion in compound semiconductors.- Diffusion in silicides.- Chemical diffusion.- Grain-boundary and dislocation diffusion.- Surface diffusion

Caracteristici

Includes supplementary material: sn.pub/extras