Electromigration in Metals: Fundamentals to Nano-Interconnects
Autor Paul S. Ho, Chao-Kun Hu, Martin Gall, Valeriy Sukhareven Limba Engleză Hardback – 11 mai 2022
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Specificații
ISBN-13: 9781107032385
ISBN-10: 1107032385
Pagini: 430
Dimensiuni: 174 x 250 x 24 mm
Greutate: 0.95 kg
Editura: Cambridge University Press
Colecția Cambridge University Press
Locul publicării:New York, United States
ISBN-10: 1107032385
Pagini: 430
Dimensiuni: 174 x 250 x 24 mm
Greutate: 0.95 kg
Editura: Cambridge University Press
Colecția Cambridge University Press
Locul publicării:New York, United States
Cuprins
1. Introduction to electromigration; 2. Fundamentals of electromigration; 3. Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects; 4. Stress evolution and damage formation in confined metal lines under electric stressing; 5. Electromigration in Cu interconnect structures; 6. Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects; Analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure; 8. Massive scale statistical studies for electromigration; 9. Assessment of electromigration damage in large on-chip power grids. Index.
Notă biografică
Descriere
Learn to assess electromigration reliability and design resilient chips, building from fundamental physics to advanced methodologies.