Cantitate/Preț
Produs

Festkörperprobleme: Advances in Solid State Physics, cartea 29

Editat de U. Rossler
de Limba Germană Paperback – 18 apr 2014

Din seria Advances in Solid State Physics

Preț: 49448 lei

Preț vechi: 58173 lei
-15% Nou

Puncte Express: 742

Preț estimativ în valută:
9463 9830$ 7861£

Carte tipărită la comandă

Livrare economică 03-17 februarie 25

Preluare comenzi: 021 569.72.76

Specificații

ISBN-13: 9783662160688
ISBN-10: 3662160684
Pagini: 356
Ilustrații: VII, 345 S. 270 Abb.
Dimensiuni: 170 x 244 x 19 mm
Greutate: 0.57 kg
Ediția:1989
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seria Advances in Solid State Physics

Locul publicării:Berlin, Heidelberg, Germany

Public țintă

Research

Cuprins

Charge transfer between weakly coupled normal metals and superconductors at low temperatures.- Quantum effects and the onset of superconductivity in granular films.- Pattern formation in a liquid crystal.- X-ray absorption and reflection in materials sciences.- Propagation of large-wavevector acoustic phonons new perspectives from phonon imaging.- Theory of dynamical surface states and reconstructions at crystal surfaces.- Scanning tunneling microscopy and spectroscopy on clean and metal-covered Si surfaces.- Optical dephasing and orientational relaxation of wannier-excitons and free carriers in GaAs and GaAs/AlxGa1?xAs quantum wells.- The spectroscopic evidence for the identity of EL2 and the AsGa antisite in As-grown GaAs.- On the charge state of the EL2 mid gap level semi-insulating GaAs from a quantitative analysis of the compensation.- Deep donor levels (DX centers) in III–V semiconductors: Recent experimental results.- Chemical binding, stability and metastability of defects in semiconductors.- A new look at the reliability of thin film metallizations for microelectronic devices.- Quantum dot resonant tunneling spectroscopy.- DC and far infrared experiments on deep mesa etched single and multi-layered quantum wires.- Coherent electron focusing.- The size-induced metal-insulator transition and related electron interference phenomena in modern microelectronics.