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Hot Carriers in Semiconductor Nanostructures: Physics and Applications

Autor Jagdeep Shah
en Limba Engleză Hardback – 16 mar 1992
Nonequilibrium hot charge carriers play a crucial role in the physics and technology of semiconductor nanostructure devices. This book, one of the first on the topic, discusses fundamental aspects of hot carriers in quasi-two-dimensional systems and the impact of these carriers on semiconductor devices. The work will provide scientists and device engineers with an authoritative review of the most exciting recent developments in this rapidly moving field. It should be read by all those who wish to learn the fundamentals of contemporary ultra-small, ultra-fast semiconductor devices.

  • Topics covered include
  • Reduced dimensionality and quantum wells
  • Carrier-phonon interactions and hot phonons
  • Femtosecond optical studies of hot carrier
  • Ballistic transport
  • Submicron and resonant tunneling devices
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Specificații

ISBN-13: 9780126381405
ISBN-10: 0126381402
Pagini: 508
Ilustrații: 1
Dimensiuni: 152 x 229 x 40 mm
Greutate: 0.94 kg
Editura: ELSEVIER SCIENCE

Public țintă

Researchers and graduate students in the applied solid state sciences and advanced microelectronic device design.

Cuprins

J. Shah, Overview. B.K. Ridley, Electron-Phonon Interactions in 2D Systems. S. Das Sarma, Quantum Many-Body Aspects of Hot-Carrier Relaxation in Semiconductor Microstructures. W. P*adotz and P. Kocevar, Cooling of Highly Photoexcited Electron-Hole Plasma in Polar Semiconductors and Semiconductor Wells: A Balance-Equation Approach. A.P. Jauho, Tunneling Times in Semiconductor Heterostructures: A Critical Review. F. Rossi, R. Brunetti, and C. Jacoboni, Quantum Transport. S.M. Goodnick and P. Lugli, Hot-Carrier Relaxation in Quasi-2D Systems. I.C. Kizilyalli and K. Hess, Monte Carlo Simulation of GaAs-AlxGA1-xASField-Effect Transistors. J. Shah, Ultrafast Luminescence Studies of Carrier Relaxation and Tunneling in Semicondutor Nanostructures. W.H. Knox, Optical Studies of Femtosecond Carrier Thermalization in GaAs. J.F. Ryan and M.C. Tatham, Time-Resolved Raman Measurements of Electron-Phonon Interactions in Quantum Wells and Superlattices. R.A. H*adopfel, J. Shah, and S. Juen, Electron-Hole Scattering in Quantum Wells. M. Heiblum and U. Sivan, Ballistic Transport in Two-Dimensional Electron Gas. N. Yokoyama, H. Oshnishi, T. Mori, M. Takatsu, S. Muto, K. Imamura, and A. Shibatomi, Resonant-Tunneling Hot Electron Transistors. E.R. Brown, Resonant Tunneling in High-Speed Double Barrier Diodes. Chapter References. Index.

Recenzii

"The contributors are mostly those persons responsible for the progress that has been made. The contributions are well balanced between theory and experiment....The book is obviously intended for active researchers in the field, but will also be of value to graduate students and researchers who want to get into the field." --SEMICONDUCTOR SCIENCE TECHNOLOGY