Indium Nitride and Related Alloys
Editat de Timothy David Veal, Christopher F. McConville, William J. Schaffen Limba Engleză Paperback – 16 iun 2017
The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor.
Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.
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Specificații
ISBN-13: 9781138116726
ISBN-10: 1138116726
Pagini: 645
Ilustrații: 361
Dimensiuni: 178 x 254 mm
Greutate: 0.45 kg
Ediția:1
Editura: CRC Press
Colecția CRC Press
ISBN-10: 1138116726
Pagini: 645
Ilustrații: 361
Dimensiuni: 178 x 254 mm
Greutate: 0.45 kg
Ediția:1
Editura: CRC Press
Colecția CRC Press
Public țintă
ProfessionalCuprins
Molecular-beam epitaxy of InN 1. Thermal stability, surface kinetics, and MBE growth diagrams for N- and In-face InN. Polarity-dependent epitaxy control of InN, InGaN and InAlN. InN in brief: Conductivity and chemical trends. Transport properties of InN. Electronic states in InN and lattice dynamics of InN and InGaN. Optical properties of InN and related alloys. Theory of InN bulk band structure. Ellipsometry of InN and related alloys. Electronic properties of InN and InGaN: Defects and doping. Theory of native point defects and impurities in InN. Surface electronic properties of InN and related alloys. Theory of InN surfaces. Structure of InN and InGaN: Transmission electron microscopy studies. InN-based dilute magnetic semiconductors. InN-based low dimensional structures. InN nanocolumns.
Notă biografică
Timothy David Veal, Christopher F. McConville, William J. Schaff
Descriere
A valuable asset in determining the present state of knowledge of indium nitride (InN), this comprehensive reference provides insight into its growth, structural, optical, and electronic properties. It combines all data since the 2001 discovery of 0.7 eV as the accepted value of the band gap of InN. Drawing from both theoretical and experimental perspectives, the expert authors cover the temperature insensitive transport properties of InN and apply InN to a wide range of device applications. They also discuss the high free electron density and the lack of a lattice-matched substrate -- two problems a user needs to know.