Cantitate/Preț
Produs

Junctionless Field–Effect Transistors – Design, Modeling, and Simulation: IEEE Press Series on Microelectronic Systems

Autor S Sahay
en Limba Engleză Hardback – 4 apr 2019
A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution--many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: * Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET * Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation * Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs * Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Citește tot Restrânge

Din seria IEEE Press Series on Microelectronic Systems

Preț: 82295 lei

Preț vechi: 90434 lei
-9% Nou

Puncte Express: 1234

Preț estimativ în valută:
15751 16380$ 13180£

Carte tipărită la comandă

Livrare economică 14-28 martie

Preluare comenzi: 021 569.72.76

Specificații

ISBN-13: 9781119523536
ISBN-10: 1119523532
Pagini: 496
Dimensiuni: 151 x 235 x 28 mm
Greutate: 0.89 kg
Editura: Wiley
Seria IEEE Press Series on Microelectronic Systems

Locul publicării:Hoboken, United States

Notă biografică

SHUBHAM SAHAY, PHD, is a Post-Doctoral Research Scholar in the Department of Electrical and Computer Engineering, University of California, Santa Barbara. He has authored several peer-reviewed journal articles on topics including semiconductor device design and modeling and unconventional applications of emerging non-volatile memories. MAMIDALA JAGADESH KUMAR, PHD, is a Professor at the Indian Institute of Technology, New Delhi and Vice-Chancellor of Jawaharlal Nehru University, New Delhi. He is Editor-in-Chief of IETE Technical Review and has widely published in the area of Micro/Nanoelectronics.

Cuprins