Many-Atom Interactions in Solids: Proceedings of the International Workshop, Pajulahti, Finland, June 5–9, 1989: Springer Proceedings in Physics, cartea 48
Editat de Risto M. Nieminen, Martti J. Puska, Matti Manninenen Limba Engleză Paperback – 6 dec 2011
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Specificații
ISBN-13: 9783642757556
ISBN-10: 3642757553
Pagini: 336
Ilustrații: VIII, 319 p.
Dimensiuni: 170 x 242 x 18 mm
Greutate: 0.54 kg
Ediția:Softcover reprint of the original 1st ed. 1990
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seria Springer Proceedings in Physics
Locul publicării:Berlin, Heidelberg, Germany
ISBN-10: 3642757553
Pagini: 336
Ilustrații: VIII, 319 p.
Dimensiuni: 170 x 242 x 18 mm
Greutate: 0.54 kg
Ediția:Softcover reprint of the original 1st ed. 1990
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seria Springer Proceedings in Physics
Locul publicării:Berlin, Heidelberg, Germany
Public țintă
ResearchCuprins
I General Reviews.- to Many-Atom Interactions in Solids.- Volume and Pair Forces in Solids and Liquids.- The Effective-Medium Theory.- The Embedded Atom Method: A Review.- From Exact to Approximate Theory: The Tight Binding Bond Model and Many-Body Potentials.- Implications of the Embedded-Atom Method Format.- Molecular Dynamics Simulations of Materials Phenomena.- Atoms Embedded in Electron Gas.- The Structural and Electronic Properties of Molten Metals, Semimetals, and Semiconductors.- II Metals.- First-Principles Interatomic Potentials in Transition Metals: Multi-ion Interactions and Their Analytic Representation.- The Effective-Medium Theory Beyond the Nearest Neighbour Interaction.- Defect Migration in Perfect Lattices.- Dynamic Simulations of Dislocation Core Structures in Gold Using Many- Atom Interactions.- One-Electron Energy Corrections in the Effective-Medium Theory: Application to Copper Clusters.- Dynamic Methods for Electronic Problems.- III Semiconductors and Covalent Materials.- Simulated Annealing Studies of Sulphur and Selenium Clusters.- Effective-Medium Theory: Considering Corrections and Delimitations.- Improved Tight Binding Parameters for Silicon.- A Pair Potential Model of Covalent Bonding in Silicon.- Derivation of Angular Forces for Semiconductors and Transition Metals.- Molecular Dynamics and Tight-Binding.- IV Surface Phenomena.- Linear Surface Model and the Environment-Dependent Effective Pair Potential.- Simulation of Surface Premelting.- Hydrogen Diffusion on Metal Surfaces — Nonadiabatic Effects.- Molecular Dynamics Simulations for Molecular Beam Epitaxy.- Initial Stages of Oxidation of Al(lll).- Index of Contributors.