Microscopy of Semiconducting Materials 1983, Third Oxford Conference on Microscopy of Semiconducting Materials, St Catherines College, March 1983
Autor A. G. Cullisen Limba Engleză Hardback – 1983
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Specificații
ISBN-13: 9780854981588
ISBN-10: 0854981586
Pagini: 300
Dimensiuni: 156 x 234 x 30 mm
Greutate: 1.09 kg
Ediția:1
Editura: CRC Press
Colecția CRC Press
ISBN-10: 0854981586
Pagini: 300
Dimensiuni: 156 x 234 x 30 mm
Greutate: 1.09 kg
Ediția:1
Editura: CRC Press
Colecția CRC Press
Public țintă
ProfessionalCuprins
Section 1 Structure and properties of dislocations, Section 2 High resolution microscopy, Section 3 Transient annealing phenomena, Section 4 Silicon characterisation, Section 5 Compund semiconductor characterization, Section 6 Scanning EBIC and CL, Section 7 X-ray techniques, Section 8 Non-conventional microscopy, Section 9 Device assement by scanning microscopy, Section 10 Device assessment by transmisison microscopy.
Notă biografică
A. G. Cullis (Author) , S. M. Davidson (Edited by) , G. R. Booker (Edited by)
Descriere
This volume contains invited and contributed papers at the conference on Microscopy of Semiconducting Materials which took place on 21–23 March 1983 in St Cathernine's College, Oxford. The conference was the third in the series devoted to advances in microscopical studies of semiconductors.