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Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors de Farzan Jazaeri

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors

Autor Farzan Jazaeri, Jean-Michel Sallese
en Limba Engleză Hardback – 28 feb 2018
The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.
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Specificații

ISBN-13: 9781107162044
ISBN-10: 1107162041
Pagini: 252
Ilustrații: 122 b/w illus. 7 tables
Dimensiuni: 178 x 254 x 15 mm
Greutate: 0.64 kg
Editura: Cambridge University Press
Colecția Cambridge University Press
Locul publicării:New York, United States

Cuprins

1. Introduction; 2. Review on modeling junctionless FETs; 3. The EPFL charge-based model of junctionless field-effect transistors; 4. Model driven design – space of junctionless FETs; 5. Generalization of the charge based model: accounting for inversion layers; 6. Predicted performances of junctionless FETs; 7. Short channel effects in symmetric junctionless double-gate FETs; 8. Modeling AC operation in symmetric double-gate and nanowire JL FETs; 9. Modeling asymmetric operation of double-gate junctionless FETs; 10. Modeling noise behavior in junctionless FETs; 11. Carrier mobility extraction methodology in JL and inversion mode FETs; 12. Revisiting the Junction FET: a junctionless FET with an ∞ gate capacitance; 13. Modeling junctionless FET with interface traps targeting biosensor applications; Appendix A. Design – space of twin gate junctionless vertical slit FETs; Appendix B. Transient off-current in junctionless FETs; Appendix C. Derivatives of mobile charge density with respect to VGS and VDS; Appendix D. Global charge density at drain in depletion mode; Appendix E. Global charge density at drain in accumulation mode; Appendix F. The EPFL Junctionless MODEL ver.1.0.

Descriere

The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.

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