New Data and Updates for I-VII, III-V and II-VI Compounds: Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology - New Series, cartea 44C

AgBr: heat capacity.- AgBr: thermal conductivity, thermal diffusivity.- AgBr: heat of sublimation.- AgBr: effective masses.- AgBr: lattice constants.- AgBr: lattice constants.- AgBr: mean square relative displacements.- AgBr: bulk moduli, elastic constants.- AgBr: compressibility, bulk modulus.- AgBr: phonon dispersion.- AgBr: Debye-Waller factor.- AgBr: elastic moduli.- AgBr: dielectric function.- AgIxBr1–x: electrical conductivity, thermoelectric power.- AgCl: heat capacity.- AgCl: heat of sublimation.- AgCl: thermal conductivity, thermal diffusivity.- AgCl: band structure, electron density of states.- AgCl: effective masses.- AgCl: energy gaps, density of states.- AgCl: lattice constants.- AgCl: lattice constants.- AgCl: phonon dispersion.- AgCl: bulk moduli, elastic constants.- AgCl: compressibility, bulk modulus.- AgCl: elastic moduli.- AgCl: Debye-Waller factor.- AgCl: dielectric function.- AgCl: impurity g-factors, hyperfine structure constants.- AgF: lattice constants.- AgF: heat of sublimation.- ?-AgI: bulk moduli.- ?-AgI: lattice constants.- ?-AgI: mean square relative displacements.- AgI: phase transitions, p-T phase diagram.- AgI: heat of sublimation.- AgI: lattice constants.- AgI: compressibility, bulk modulus.- AgI: phonon dispersion.- AgI: Debye-Waller factor.- AgI: elastic moduli, mode Grüneisen parameters.- ?-AgI: ion diffusion coefficient.- AlAs: dielectric constant, refractive index.- AlAs: direct and indirect energy gaps.- AlAs: effective mass parameters.- AlAs: electron density of states, energies at symmetry points.- AlAs: energy gaps.- AlGaxAs1–x: heat capacity.- AlGaxAs1–x: linear thermal expansion coefficient.- AlGaxAs1–x: thermal conductivity, thermal diffusivity.- AlxGa1–xAs: crossover composition energy at symmetry points.- AlxGa1–xAs: electron self energy, electron broadening parameter.- AlxGa1–xAs: lattice constant.- AlxGa1–xAs: elastic constants, Poisson ratio.- AlxGa1–xAs: refractive index, dielectric constant.- AlxGayIn1–x–yAs: bondlength.- AlxGayIn1–x–yAs: energy gap.- AlxGayIn1–x–yAs: Raman spectra.- AlxGayIn1–x–yAs: hole mobility.- AlxGayIn1–x–yAs: photoluminescence linewidth.- AlxGa1–xAsySb1–y: internal strain parameter.- AlxGa1–xAsySb1–y: thermal conductivity.- AlxGa1–xAsySb1–y: band structure.- AlxGa1–xAsySb1–y: effective mass parameters.- AlxGa1–xAsySb1–y: energy gaps.- AlxGa1–xAsySb1–y: elastic moduli.- AlxGa1–xAsySb1–y: dielectric constant.- AlxGa1–xAsySb1–y: photoluminescence, absorption coefficient.- AlxIn1–xAs: critical point energies.- AlxIn1–xAs: Raman data.- Al1–xMnxAs: crystal structure, lattice parameter.- Al1–xMnxAs: resistance.- Al1–xMnxAs: magnetic phases.- AlAsxSb1–x: thermal conductivity.- AlxGayIn1–x–yP: bond length.- AlxGa1–xP: lattice parameters.- AlxGa1–xP: critical point energies, interband transition energies.- AlxGa1–xP: electron self energy.- AlxGa1–xP: exciton energies.- AlxGa1–xP: bound exciton data.- AlxGa1–xP: photoluminescence spectra.- AlxGa1–xPySb1–y: elastic moduli.- AlxGa1–xPySb1–y: internal strain parameter.- AlxIn1–xPySb1–y: internal strain parameter.- AlxIn1–xPySb1–y: elastic moduli.- BxGa1–xAs: energy gaps, energy at symmetry points.- BxGa1–xAs: lattice parameter.- BxGa1–x–yInyAs: critical point energies.- BxGa1–x–yInyAs: electron effective mass.- BxGa1–x–yInyAs: energy gaps.- GaAs1–xBix: direct energy gap, intraband transition energies.- GaAs1–xBix: energy gaps, critical point energies.- GaAs1–xBix: spin orbit splitting energy.- GaAs1–xBix: spin orbit splitting energy.- BxIn1–xAs: lattice parameter.- Ga1–xCrxAs: crystal structure, lattice parameter.- Ga1–xCrxAs: conductivity, carrier concentration.- Ga1–xCrxAs: Curie temperature, magnetic circular dichroism.- Ga1–xFexAs: crystal structure, lattice parameter.- Ga1–xFexAs: conductivity, magnetoresistance.- Ga1–xFexAs: magnetization.- GaAs: heat capacity.- GaAs: spin-Hall conductivity, transversal spin drift velocity.- GaAs: phonon density of states.- GaAs: Debye temperatures.- GaAs: spin transport data, spin lifetime, spin drift velocity.- GaAs: photoemission data.- GaAs: radiative recombination coefficient.- GaxIn1–xAs: effective Landé g factors.- GaxIn1–xAs: electron effective mass.- GaxIn1–xAs: energy gaps.- GaxIn1–xAs: parameters of k·p models.- GaxIn1–xAs: critical point energies.- GaxIn1–xAs: phonon wave numbers.- GaxIn1–xAs: carrier lifetime.- GaxIn1–xAs: spin transport data.- GaxIn1–xAs: impact ionization rate.- GaxIn1–xAs: dielectric function.- GaxIn1–xAs: Auger recombination coefficient and lifetime.- GaxIn1–xAs: radiative recombination coefficients.- GaxIn1–xAsyP1–y: energy gaps.- GaxIn1–xAsyP1–y: energy gaps.- GaxIn1–xAsyP1–y: Auger recombination coefficient.- GaxIn1–xAsyP1–y: radiative recombination coefficients.- GaxIn1–xPySbzAs1–y–z: band structure, density of states.- GaxIn1–xPySbzAs1–y–z: energy gaps.- GaxIn1–xPySbzAs1–y–z: transverse effective charge, dielectric constants.- GaxIn1–xAsySb1–y: lattice constant.- GaxIn1–xAsySb1–y: thermal conductivity.- GaxIn1–xAsySb1–y: critical point energies.- GaxIn1–xAsySb1–y: energy gaps.- GaxIn1–xAsySb1–y: energy gap.- GaxIn1–xAsySb1–y: absorption coefficient.- GaxIn1–xAsySb1–y: absorption coefficient.- GaxIn1–xAsySb1–y: Auger recombination coefficient, nonradiative lifetime.- GaxIn1–xAsySb1–y: dielectric constant.- GaxIn1–xAsySb1–y: dielectric constant.- GaxIn1–xAsySb1–y: refractive index.- Ga1–xMnxAs: crystal structure, lattice parameter.- Ga1–xMnxAs: band structure, direct energy gap.- Ga1–xMnxAs: spin polarization.- Ga1–xMnxAs: conductivity, resistivity, magnetoresistance, Hall effect.- Ga1–xMnxAs: exchange integrals, Curie temperature, magnetic anisotropy.- Ga1–xMnxAs: magnetic circular dichroism, Verdet constant.- GaAs1–xSbx: direct energy gap, spin orbit splitting energy.- GaAsxSb1–x: energy gaps.- GaAsxSb1–x: photoluminescence.- GaAsxSb1–x: refractive index.- InAs: total energies, phase diagram.- InAs: band structure.- InAs: critical point energies.- InAs: Dresselhaus spin splitting parameter.- InAs:spin orbit splitting energies.- InAs: effective mass parameters.- InAs: energies at symmetry points.- InAs: effective Landé g factors.- InAs: interband transition energies.- InAs: energy gap.- InAs: phonon frequencies.- InAs: mobility.- InAs: electron spin lifetime.- InAs: drift velocity.- InAs: dielectric constant.- InAs: absorption coefficient, reflectivity.- InAs: extinction coefficient, refractive index.- InAs: higher order optical susceptibilities.- In1–xMnxAs: crystal structure, lattice parameter.- In1–xMnxAs: direct gap, effective masses.- In1–xMnxAs: conductivity, magnetoresistance, Hall resistivity.- In1–xMnxAs: carrier concentration, mobility.- In1–xMnxAs: magnetic circular dichroism.- In1–xMnxAs: magnetic phases, exchange integrals, Curie temperature, magnetic anisotropy-->In1–xMnxAs: magnetic phases, exchange integrals, Curie temperature, magnetic anisotropy.- InAsxSb1–x: critical point energies, broadening parameters.- InAsxSb1–x: energy gaps.- InxAs1–xSb: transverse effective charge.- InAsxSb1–x: sound velocities.- InAsxSb1–x: elastic moduli.- InAsxSb1–x: dielectric constant.- InBixSb1–x: transverse effective charge.- CuCl1–xBrx: phonon wavenumbers.- CuCl1–xBrx: electron mobility, drift velocity.- CuBr: p-T phase diagram, transition pressure.- CuBr: interionic distance.- CuBr: heat of sublimation.- ?-CuBr: biexciton and trion data.- ?-CuBr: deformation potentials.- ?-CuBr: energy gaps, exciton energies in dependence on temperature.- CuBr: elastic moduli, effective charges.- CuBr: Grüneisen parameters.- CuBr: phonon wavenumbers, damping constants, Grüneisen parameters.- CuBr: phonon dispersion curves, phonon density of states.- CuBr: lattice constants.- ?-CuBr: mean square relative displacements.- CuBr: bulk modulus.- ?-CuBr: ion transport properties.- ?-CuBr: electron mobility, drift velocity.- ?-CuBr: dielectric constants.- Hg1–x–y–zCdxMnyZnzTe: energy gap.- Hg1–x–y–zCdxMnyZnzTe: micro hardness.- Hg1–x–y–zCdxMnyZnzTe: intrinsic carrier concentration,conductivity, Hall coefficient, mobility.- Hg1–x–y–zCdxMnyZnzTe: activation energy.- Hg1–xCdxTe: activation energy.- Hg1–xCdxTe: mobility, carrier concentration.- Hg1-xCdxTe: free-carrier absorption.- Hg1–xCdxTe: luminescence, reflectance, absorption, and refractive index.- Hg1-xCdxTe: reflectance.- Hg1-xCdxTe: two-photon absorption constant.- CdO: band structure, density of states.- CdO: energy gaps.- CdO: mean inner potential.- CdO: photoconductivity, resistivity.- Zn1–xCdxO: energy gaps, dependence on temperature.- Zn1–xCdxO: resistivity.- CdS: phase transition, transition pressure.- CdS: exciton energies, exciton binding energies.- CdS: bound excitons.- CdS: defect formation energies.- CdS: resistivity.- CdS: conductivity, mobility.- CdSe: phase transition, transition pressure.- CdSe: energy gaps.- CdSe: dielectric constants.- CdSe: higher order optical susceptibilities.- Sn1–xCdxTe: hardness.- ZnxCd1–xS: energy gaps.- Cd1–xZnxS: resistivity.- CdTe: density of states.- CdTe: energygaps, temperature dependence.- CdTe: band structure.- CdTe: impurity complexes.- CdTe: impurity complexes.- CdTe: ionization energies.- CdTe: ionization energies.- CdTe: bound excitons.- CdTe: donor-acceptor pairs, free-to-bound transitions.- CdTe: emission energies.- CdTe: bound excitons.- CdTe: Hall mobility.- CdTe: mobility.- CdTe: resistivity.- CdTe: conductivity, resistivity.- CdTe: dielectric constants.- CdTe: higher order optical susceptibilities.- Cd1–xZnxTe: enthalpy.- Cd1–xZnxTe: energy gaps.- Cd1–xZnxTe: donor acceptor pairs.- Cd1–xZnxTe: ionization energies.- Cd1–xZnxTe: resistivity, mobilities, Hall coefficient.- ?-CuCl: exciton energies.- ?-CuCl: phonon wavenumbers.- CuCl: mean square relative displacements.- CuCl: phonon dispersion.- CuCl: elastic moduli.- SiC: valence band offsets.- SiC: spontaneous polarization.- SiC: absorption coefficient.- SiC: Auger recombination coefficient.- SiC: exciton gap.- ?-SiC: nonlinear optical coefficients.- SiC: refractive index.- CuF:heat of sublimation.- CuF: lattice constants.- CuI: phase transitions, p-T phase diagram.- CuI: heat of sublimation.- ?-CuI: biexciton and trion data.- ?-CuI: exciton energies.- CuI: force constants, elastic moduli, effective charges.- CuI: bulk modulus.- CuI: phonon dispersion.- ?-CuI: phonon wavenumbers.- CuI: lattice parameters.- CuI: mode Grüneisen parameters.- ?-CuI: mean square displacement.- CuI: ion diffusion coefficient.- ?-CuI: electron mobility, drift velocity.- GaxIn1–xP: elastic moduli.- GaxIn1–xP: transverse effective charge.- Ga1–xMnxSb: crystal structure.- Ga1–xMnxSb: conductivity, magnetoresistance, Hall resistivity.- Ga1–xMnxSb: Curie temperature, magnetic anisotropy.- GaP: phonon density of states.- Hg1–xMnxTe: energy gaps, effective masses.- Hg1–xMnxTe: ionization energies.- Hg1–xMnxTe: mobility, conductivity and Hall coefficient.- Hg1–xMnxTe: absorption, reflectivity.- HgS: point/space groups.- HgS: band structure, energy gaps.- HgS: energy gaps.- HgS: conductivity.- HgS: resistivity.- HgSe: band structure, electron density of states.- HgSe: transmittance.- HgTe: lattice parameters.- HgTe: point/space groups.- HgTe: band structure, density of states.- HgTe: conductivity, Hall coefficient.- HgTe: resisitivity, carrier mobility.- HgTe: Seebeck coefficient.- Hg1-xZnxTe: phonon frequencies.- Hg1-xZnxTe: reflectance.- In1–xMnxSb: crystal structure, lattice parameter.- In1–xMnxSb: spin polarization.- In1–xMnxSb: conductivity, Hall resistivity.- In1–xMnxSb: magnetic phases, Curie temperature, magnetic anisotropy.- InPxSb1–x: energy gaps.- InPxSb1–x: effective charges.- InPxSb1–x: phonon frequencies.- InPxSb1–x: dielectric constant.- InSb: interband transition energies.- InSb: spin orbit splittings.- InSb: Dresselhaus spin splitting parameter.- InSb: effective Landé g factors.- InSb: effective mass parameters.- InSb: energies at symmetry points.- InSb: band structure.- InSb: critical point energies.- InSb: spin transport data.- InSb: absorption coefficient, reflectivity.- InSb: Auger lifetime.- InSb: dielectric constant.- InSb: extinction coefficient, refractive index.- InSb: higher order optical susceptibilities.- MgyZn1–yTe1–xSex: energy gaps.- Zn1-xMgxTe: energy gaps, bowing parameter.- Zn1–xMgxSe: absorption.- ZnSe1–xOx: exciton energies, exciton binding energies.- ZnSxO1-x: energy gaps, bowing parameter.- ZnO: mean inner potential.- ZnO: dielectric constants.- ZnSe: phase transition, transition pressure.- ZnSe: spin-orbit splitting.- ZnSe: deformation potentials.- ZnSe: Compton profiles.- ZnSe: Compton scattering profiles.- ZnSe: bound exciton data.- ZnSe: bound excitons and electrons.- ZnSe: bound excitons.- ZnSe: deep impurities.- ZnSe: deep impurities, muonium data.- ZnSe: diffusion coefficient.- ZnSe: donor acceptor pairs.- ZnSe: donor-acceptor pairs, free-to-bound transitions.- ZnSe: ionization and excitation energies.- ZnSe: ionization and excitation energies.- ZnSe: Hall mobility.- ZnSe: conductivity.- ZnSe: dielectric constants.- ZnSxSe1-x: energy gaps, bowing parameter.- ZnSxSe1-x: refractive index, dielectric constants.- ZnS1-xTex: bound excitons.- ZnS: phase transition, transition pressure.- ZnS: spin-orbit splitting.- ZnS: deep impurities, muonium data.- ZnS: ionization energies.- ZnS: resistivity.- ZnS: dielectric constants.- ZnS: dielectric constants.- ZnS: dielectric constants.- ZnTe: spin-orbit splitting.- ZnTe: bound excitons.- ZnTe: donor-acceptor-pairs.- ZnTe: ionization energies.- ZnTe: ionization energies.- ZnTe: diffusion coefficient.- ZnTe: resistivity.- ZnTe: thermoelectric power.- ZnTe: refractive index, dielectric constants.

Standard reference book with selected and easily retrievable data from the fields of physics and chemistry collected by acknowledged international scientists Also available online in www.springerLink.com http://www.landolt-boernstein.com