Porous Silicon Science and Technology: Winter School Les Houches, 8 to 12 February 1994: Centre de Physique des Houches, cartea 1
Editat de Jean-Claude Vial, Jacques Derrienen Limba Engleză Paperback – 20 mar 1995
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Specificații
ISBN-13: 9783540589365
ISBN-10: 3540589368
Pagini: 380
Ilustrații: XVII, 358 p. 117 illus.
Dimensiuni: 170 x 244 x 20 mm
Greutate: 0.6 kg
Ediția:1995
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seria Centre de Physique des Houches
Locul publicării:Berlin, Heidelberg, Germany
ISBN-10: 3540589368
Pagini: 380
Ilustrații: XVII, 358 p. 117 illus.
Dimensiuni: 170 x 244 x 20 mm
Greutate: 0.6 kg
Ediția:1995
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seria Centre de Physique des Houches
Locul publicării:Berlin, Heidelberg, Germany
Public țintă
ResearchCuprins
Lecture 1 Fundamental aspects of the semiconductor-solution interface.- Lecture 2 The silicon/electrolyte interface.- Lecture 3 Porous silicon: material processing, properties and applications.- Lecture 4 Luminescence of porous silicon after electrochemical oxidation.- Lecture 5 Mechanism for light emission from nanoscale silicon.- Lecture 6 Theory of silicon crystallites. Part II.- Lecture 7 Doping of a quantum dot and self-limiting effect in electrochemical etching.- Lecture 8 Electronic and optical properties of semiconductors quantum wells.- Lecture 9 What can be learned from time resolved measurements on porous silicon luminescence.- Lecture 10 Ion beam analysis of thin films. Applications to porous silicon.- Lecture 11 IR spectroscopy of porous silicon.- Lecture 12 Nano characterization of porous silicon by transmission electron microscopy.- Lecture 13 Electron paramagnetic resonance spectroscopy: Defect and structural analysis of solids.- Lecture 14 Raman scattering in silicon nanostructures.- Lecture 15 Scattering of X-rays.- Lecture 16 X-ray photoemission spectroscopy.- Lecture 17 Optoelectronic properties of porous silicon. The electroluminescent devices.- Lecture 18 Porous silicon luminescence under cathodic polarisation conditions.- Lecture 19 Interrelation between electrical properties and visible luminescence of porous silicon.- Lecture 20 Characteristics of porous n-type silicon obtained by photoelectrochemical etching.- Lecture 21 Porous Si: From single porous layers to porosity superlattices.