Principles and Analysis of Aigaas/GAAS Heterojunction Bipolar Transistors
Autor Juin J. Liouen Limba Engleză Hardback – 29 feb 1996
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Specificații
ISBN-13: 9780890065877
ISBN-10: 089006587X
Pagini: 227
Dimensiuni: 158 x 235 x 18 mm
Greutate: 0.53 kg
Editura: Artech House Publishers
ISBN-10: 089006587X
Pagini: 227
Dimensiuni: 158 x 235 x 18 mm
Greutate: 0.53 kg
Editura: Artech House Publishers
Cuprins
Introduction. Abrupt AlGaAs/GaAs HBT. Collector and Base Current in Abrupt HBT. Cutoff Frequency. Avalanche Multiplication Characteristics. Enhanced Structures, Base Grading, Setback Layer, and Graded Layer. Combined Effect of Setback and Graded Layers. Thermal Effect in AlGaAs/GaAs HBT. Self-Heating and Thermal Coupling Effects in Multiple-Emitter Finger HBT. Thermal-Avalanche Interacting Behavior. Base and Collector Leakage Currents. Leakage Currents at the Emitter-Base, Base-Collector, and Collector-Subcollector Peripheries, and the Subcollector-Substrate Interface. Base and Collector Currents Including Normal and Leakage Components. Leakage Current Characteristics in Post-Burn. Noise and High-Frequency Noise Characteristics. Overview of 1/F, Burst, and Shot Noise. Numerical Simulation. Overview of Two-Dimensional Device Simulator MEDICI. Effects of Graded Layer, Setback Layer, and Self-Heating. Effects of Different Base and Collector Structures.