Properties of Impurity States in Superlattice Semiconductors: NATO Science Series B:, cartea 183
Editat de C. Y. Fong, Inder P. Batra, S. Ciracien Limba Engleză Paperback – 25 feb 2012
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Specificații
ISBN-13: 9781468455557
ISBN-10: 1468455559
Pagini: 368
Ilustrații: 351 p.
Dimensiuni: 178 x 254 x 19 mm
Greutate: 0.64 kg
Ediția:1988
Editura: Springer Us
Colecția Springer
Seria NATO Science Series B:
Locul publicării:New York, NY, United States
ISBN-10: 1468455559
Pagini: 368
Ilustrații: 351 p.
Dimensiuni: 178 x 254 x 19 mm
Greutate: 0.64 kg
Ediția:1988
Editura: Springer Us
Colecția Springer
Seria NATO Science Series B:
Locul publicării:New York, NY, United States
Public țintă
ResearchCuprins
I. Growth Techniques and Characterizations of Superlattice Semiconductors.- 1 Doping in Two Dimensions: The ?-Layer.- 2 Optical Measurements of Acceptor Concentration Profiles at GaAs/GaAlAs Quantum Well Interfaces.- 3 Molecular Beam Epitaxy of Ga0.99Be0.01As for Very High Speed Heterojunction Bipolar Transistors.- 4 Progress Report on Molecular Beam Epitaxy of III–V Semiconductors — from Fibonacci to Monolayer Superlattices.- 5 Interface Characterization of GaInAs-InP Superlattices Grown by Low Pressure Metalorganic Chemical Vapor Deposition.- 6 Structural and Chemical Characterization of Semiconductor Interfaces by High Resolution Transmission Electron Microscopy.- II. Deep and Shallow Impurity States.- 7 Deep Level Behavior in Superlattice.- 8 Role of the Si Donors in Quantum and Ultraquantum Transport Phenomena in GaAs-GaAlAs Heterojunctions.- 9 Defects Characterization in GaAs-GaAlAs Superlattices.- 10 Studies of the DX Centre in Heavily Doped n+GaAs.- 11 Shallow and Deep Impurity Investigations: the Important Step Towards a Microwave Field-Effect Transistor Working at Cryogenic Temperatures.- 12 Electronic States in Heavily and Ordered Doped Superlattice Semiconductors.- 13 Properties of Impurity States in n-i-p-i Superlattice Structures.- 14 Deep Impurity Levels in Semiconductors, Semiconductor Alloys, and Superlattices.- 15 “Pinning” of Transition-Metal Impurity Levels.- III. Quantum Well States.- 16 Theory of Impurity States in Superlattice Semiconductors.- 17 Effective-Mass Theory of Electronic States in Heterostructures and Quantum Wells.- 18 Hot Electron Capture in GaAs MQW: NDR and Photo-Emission.- 19 In-Plane Electronic Excitations in GaAs/GaAlAs Modulation Doped Quantum Wells.- 20 Resonant Tunneling in Double Barrier Heterostructures.- 21Extrinsic Photoluminescence in Unintentionally and Magnesium Doped GaInAs/GaAs Strained Quantum Wells.- 22 Magneto-Optics of Excitons in GaAs-(GaAl) As Quantum Wells.- IV. Two Dimensional and Other Electronic Properties.- 23 The Influence of Impurities on the Shubnikov-De Haas and Hall Resistance of Two-Dimensional Electron Gases in GaAs/AlxGa1-xAs Heterostructures Investigated by Back-Gating and Persistent Photoconductivity.- 24 Cyclotron Resonance of Polarons in Two Dimensions.- 25 Structure and Electronic Properties of Strained Si/Ge Semiconductor Superlattices.- 26 Theory of Raman Scattering from Plasmons Polaritons in GaAs/AlxGa1-xAs Superlattices.- In dex.