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Silicon Non–Volatile Memories – Paths of Innovation

Autor B de Salvo
en Limba Engleză Hardback – 10 aug 2009
This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different "evolutionary paths" based on new materials and new transistor structures are investigated to extend classical floating gate technology to the 32 nm node. "Disruptive paths" are also covered, addressing 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.
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Specificații

ISBN-13: 9781848211056
ISBN-10: 1848211058
Pagini: 246
Dimensiuni: 164 x 244 x 19 mm
Greutate: 0.52 kg
Editura: ISTE Ltd.
Locul publicării:Hoboken, United States

Public țintă

Electronic engineers, pc and consumer products design engineers pc and consumer products, telecommunication and mobile communication application engineers, aerospace systems engineers and managers, reliability engineers, automotive engineers

Notă biografică

Barbara De Salvo is a scientist at LETI (Electronics and Information Technology Laboratory of CEA, France). She currently manages the advanced memory group, covering the engineering and physics of new technologies for ULSI-circuits.


Descriere

This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed.