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Wide Bandgap Semiconductors for Power Electronics – Materials, Devices, Applications de P Wellmann

Wide Bandgap Semiconductors for Power Electronics – Materials, Devices, Applications

Autor P Wellmann
en Limba Engleză Hardback – 19 oct 2021
The book gives a comprehensive overview the wide bandgap materials SiC, GaN, C (diamond) and Ga(III) oxide, covering in detail the growth of these materials, their characterization and their use in a variety of power electronics devices.
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Specificații

ISBN-13: 9783527346714
ISBN-10: 3527346716
Pagini: 736
Dimensiuni: 177 x 249 x 46 mm
Greutate: 1.75 kg
Ediția:2 Volumes
Editura: Wiley Vch
Locul publicării:Weinheim, Germany

Cuprins

Introduction PART I. SILICON CARBIDE (SiC) Bulk Growth of hex-SiC Industrial Perspectives on hex-SiC Bulk Growth CVD Epitaxy of hex-SiC Industrial Perspective on CVD Epitaxy of hex-SiC Bulk and Epitaxial Growth of c-SiC Intrinsic Defects in SiC Dislocations in SiC Bulk Wafers and Epitaxial Layers: Characterization Using X-Ray Techniques Dislocations in SiC Bulk Wafers and Epitaxial Layers: Characterization Using Photoluminescence and Two-Photon Absorption Microscopy Theoretical Approaches to Understanding Evolution and Propagation of Dislocations in SiC MOS Gate Oxide Interface Defects in SiC SiC-Graphene Interfaces Device Processing Using c-SiC and hex-SiC Unipolar SiC Devices Bipolar SiC Devices Reliability of SiC Devices Industrial Systems Using SiC Circuits Hybrid Electric Vehicles and Electric Vehicles Applications of SiC Novel Applications of SiC in Quantum Information PART II. GALLIUM NITRIDE (GaN), DIAMOND, AND Ga2O3 Ammonothermal and HVPE Bulk Growth of GaN GaN on Si HPSG and CVD Growth of Diamond Diamond Epitaxy and Device Processing Epitaxial Growth of Beta-Ga2O3