3D Integration of Resistive Switching Memory

Editat de Qing Luo

en Limba Engleză Paperback – 19 dec 2024

This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures, to its applications.

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Specificații

ISBN-13: 9781032489506
ISBN-10: 1032489502
Pagini: 98
Dimensiuni: 216 x 138 x 11 mm
Greutate: 0.15 kg
Editura: Taylor & Francis Ltd.

Cuprins

1. Introduction
Qing Luo
2.Associative Problems in Crossbar array and 3D architectures
Qing Luo
3. Selector Devices and Self-selective cells
Yaxin Ding, Qing Luo
4. Integration of 3D RRAM
Qing Luo
5. Reliability issues of the 3D Vertical RRAM
Tiancheng Gong, Dengyun Lei
6. Applications of 3D RRAM Beyond Storage
Xumeng Zhang, Xiaoxin Xu, Jianguo Yang
7. Conclusion
Qing Luo

Notă biografică

Qing Luo received his Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing, China, in 2017. He is currently Professor at the Key Laboratory of Microelectronics Devices and Integrated Technology in IMECAS. His research interests are emerging memory devices including resistive RAM devices and ferroelectric memory devices.

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