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Contemporary Trends in Semiconductor Devices: Theory, Experiment and Applications de Rupam Goswami

Contemporary Trends in Semiconductor Devices: Theory, Experiment and Applications: Lecture Notes in Electrical Engineering, cartea 850

Editat de Rupam Goswami, Rajesh Saha
en Limba Engleză Paperback – 18 feb 2023
This book covers evolution, concept and applications of modern semiconductor devices such as tunnel field effect transistors (TFETs), vertical super-thin body MOSFETs, ion sensing FETs (ISFETs), non-conventional solar cells, opto-electro mechanical devices and thin film transistors (TFTs). Comprising of theory, experimentation and applications of devices, the chapters describe state-of-art methods and techniques which shall be highly assistive in having an overall perspective on emerging technologies and working on a research area. The book is aimed at the scholars, enthusiasts and researchers who are currently working on devices in the contemporary era of semiconductor devices. Additionally, the chapters are lucid and descriptive and carry the potential of serving as a reference book for scholars in their undergraduate studies, who are looking ahead for a prospective career in semiconductor devices.
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Specificații

ISBN-13: 9789811691263
ISBN-10: 9811691266
Pagini: 301
Ilustrații: XI, 301 p. 193 illus., 146 illus. in color.
Dimensiuni: 155 x 235 mm
Greutate: 0.45 kg
Ediția:1st ed. 2022
Editura: Springer Nature Singapore
Colecția Springer
Seria Lecture Notes in Electrical Engineering

Locul publicării:Singapore, Singapore

Cuprins

Introduction.- A Brief Insight into the Vertical Super-Thin Body (VSTB) MOSFET.- Effect of Noise and Temperature on the Performance of Ferro-Tunnel FET.- An Introduction of Organic Photovoltaic Application from Material and Fabrication Perspective.- Recent Development and Future Prospects of Rigid and Flexible Dye-Sensitized Solar Cell: A Review.- Theory of Nanostructured Kesterite Solar Cell.- Nano-Material based Sensitized Solar Cells.- Lateral Straggle Parameter and its Impact on Hetero-stacked Source Tunnel FET.- Fabrication of ZnO and ZnO-heterostructures for Gas Sensing Applications.- Significance of Optimal Positioning of the Reference Electrode for an ISFET.

Notă biografică

Rupam Goswami obtained his M.Tech. in 2014 and Ph.D. in 2018 from National Institute of Technology Silchar, India. Currently, he is Assistant Professor at the Department of Electronics and Communication Engineering, School of Engineering, Tezpur University, India. Before joining Tezpur University, he worked as Assistant Professor at Birla Institute of Technology and Science Pilani, Rajasthan, India. His research interests include simulation and modeling of TFETs, TFTs, FinFETs, and memristors.
His research works have appeared in 3 books, 22 international peer-reviewed journals, and 13 international peer-reviewed conferences. He is an editor of a book on carbon nanomaterial electronics.


Rajesh Saha has received B.E. with honours in Electronics and Telecommunication Engineering from Assam Engineering College, Assam, in 2012 and M.Tech. from NIT Arunachal Pradesh, Yupia, Arunachal Pradesh, in 2015. He has received Ph.D. from NIT Silchar, Assam, in 2018.  He has worked as Junior Research Fellow in IIT Guwahati from September 2012 to April 2013. Currently, he is working as Assistant Professor at the Department of ECE in MNIT Jaipur. Before joining MNIT Jaipur, he has worked as Assistant Professor in School of Electronics Engineering, VIT AP University, Amaravati. His research interest includes modeling and simulation of nanoelectronics devices, biosensors, and MEMS. He has published his research work in 25 peer-reviewed journals and 6 international peer-reviewed conferences.

Textul de pe ultima copertă

This book covers evolution, concept and applications of modern semiconductor devices such as tunnel field effect transistors (TFETs), vertical super-thin body MOSFETs, ion sensing FETs (ISFETs), non-conventional solar cells, opto-electro mechanical devices and thin film transistors (TFTs). Comprising of theory, experimentation and applications of devices, the chapters describe state-of-art methods and techniques which shall be highly assistive in having an overall perspective on emerging technologies and working on a research area. The book is aimed at the scholars, enthusiasts and researchers who are currently working on devices in the contemporary era of semiconductor devices. Additionally, the chapters are lucid and descriptive and carry the potential of serving as a reference book for scholars in their undergraduate studies, who are looking ahead for a prospective career in semiconductor devices.

Caracteristici

Discusses specific concepts of lateral straggle in TFETs and reference electrode positioning problems in ISFETs Presents mathematical models of models for CNT interconnects in VLSI Discusses voltage programming in TFT-based circuit for AMOLED displays