Defect Complexes in Semiconductor Structures: Proceedings of the International School Held in Mátrafüred, Hungary, September 13 – 17, 1982: Lecture Notes in Physics, cartea 175
Editat de J. Giber, F. Beleznay, I. C. Szep, J. Laszloen Limba Engleză Paperback – feb 1983
Din seria Lecture Notes in Physics
- 19% Preț: 423.99 lei
- 17% Preț: 360.73 lei
- Preț: 429.22 lei
- 17% Preț: 427.62 lei
- 17% Preț: 460.25 lei
- Preț: 427.96 lei
- Preț: 481.93 lei
- 17% Preț: 494.64 lei
- Preț: 281.90 lei
- 17% Preț: 493.20 lei
- 17% Preț: 426.72 lei
- Preț: 365.15 lei
- Preț: 374.52 lei
- Preț: 407.98 lei
- 20% Preț: 428.12 lei
- 15% Preț: 593.73 lei
- 15% Preț: 528.13 lei
- Preț: 493.12 lei
- 17% Preț: 425.68 lei
- Preț: 280.65 lei
- Preț: 163.41 lei
- 18% Preț: 726.59 lei
- Preț: 394.84 lei
- 15% Preț: 709.63 lei
- 15% Preț: 623.90 lei
- 20% Preț: 476.91 lei
- 15% Preț: 428.05 lei
- Preț: 342.78 lei
- 18% Preț: 851.93 lei
- Preț: 346.61 lei
- Preț: 391.57 lei
- 15% Preț: 633.16 lei
- Preț: 451.71 lei
- 5% Preț: 1497.80 lei
- Preț: 374.85 lei
- Preț: 380.07 lei
- 15% Preț: 516.14 lei
- 15% Preț: 583.78 lei
- 15% Preț: 510.95 lei
- Preț: 469.71 lei
- Preț: 388.90 lei
- 15% Preț: 500.24 lei
- Preț: 386.52 lei
- 15% Preț: 472.88 lei
- Preț: 424.27 lei
- Preț: 380.07 lei
- 15% Preț: 500.01 lei
- 15% Preț: 501.96 lei
Preț: 643.84 lei
Preț vechi: 757.46 lei
-15% Nou
Puncte Express: 966
Preț estimativ în valută:
123.21€ • 126.18$ • 102.49£
123.21€ • 126.18$ • 102.49£
Carte tipărită la comandă
Livrare economică 18 martie-01 aprilie
Preluare comenzi: 021 569.72.76
Specificații
ISBN-13: 9783540119869
ISBN-10: 3540119868
Pagini: 320
Ilustrații: VI, 311 p. 81 illus.
Dimensiuni: 170 x 244 x 17 mm
Greutate: 0.51 kg
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seria Lecture Notes in Physics
Locul publicării:Berlin, Heidelberg, Germany
ISBN-10: 3540119868
Pagini: 320
Ilustrații: VI, 311 p. 81 illus.
Dimensiuni: 170 x 244 x 17 mm
Greutate: 0.51 kg
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seria Lecture Notes in Physics
Locul publicării:Berlin, Heidelberg, Germany
Public țintă
ResearchCuprins
A technologist's view on defects.- Characterization of impurities and defects by electron paramagnetic resonance and related techniques.- Review of the possibilities of electron microscopy in the identification of defect structures.- Electrical and optical measuring techniques for flaw states.- Theory of defect complexes.- Critical comparison of the theoretical models for anomalous large lattice relaxation in III–V compounds.- Vacancy related structure defects in SiO2 — Cyclic cluster calculations compared with experimental results.- A new model for the Si-A center.- Defect complexing in iron-doped silicon.- Photoluminescence of defect complexes in silicon.- Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon.- Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon.- Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 °c.- On the field dependence of capture and emission processes at deep centres.- Lattice matched heterolayers.- Compositional transition layers in heterostructure.- Defect complexes in III–V compounds.- Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs.- Main electron traps in gaas: Aggregates of antisite defects.- Defect reactions in gap caused by zinc diffusion.- Nonstatistical defect surroundings in mixed crystals — the selfactivated luminescence centre in ZnSxSe1-x.- Structure and properties of the Si-SiO2 interregion.- Radiation defects of the semiconductor-insulator interface.- Analysis of Si/SiO2 interface defects by the method of term spectroscopy.- Theoretical aspects of laser annealing.- Radiation methods for creation of heterostructures on silicon.-Ion beam gettering in GaP.- Panel discussion.- Mechanical stress induced defect creation in GaP.