Defects and Properties of Semiconductors: Defect Engineering: Advances in Solid State Technology, cartea 3
Editat de J. Chikawa, K. Sumino, K. Wadaen Limba Engleză Paperback – 25 dec 2011
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Specificații
ISBN-13: 9789401086165
ISBN-10: 9401086168
Pagini: 272
Ilustrații: 300 p.
Dimensiuni: 152 x 229 x 14 mm
Greutate: 0.37 kg
Ediția:Softcover reprint of the original 1st ed. 1987
Editura: SPRINGER NETHERLANDS
Colecția Springer
Seria Advances in Solid State Technology
Locul publicării:Dordrecht, Netherlands
ISBN-10: 9401086168
Pagini: 272
Ilustrații: 300 p.
Dimensiuni: 152 x 229 x 14 mm
Greutate: 0.37 kg
Ediția:Softcover reprint of the original 1st ed. 1987
Editura: SPRINGER NETHERLANDS
Colecția Springer
Seria Advances in Solid State Technology
Locul publicării:Dordrecht, Netherlands
Public țintă
ResearchCuprins
1: Compound Semiconductors.- Dislocations in GaAs Crystals.- Dislocations in GaAs Crystals Grown by As-Pressure controlled Czochralski Method.- Deep Level Photoluminescence in GaAs.- Analysis of Nonstoichiometry and Doped Inpurities in GaAs by X-Ray Quasi-Forbidden Reflection (XFR) Method.- Growth of Dislocation Free InP Single Crystals.- InP MISFETs Technology.- Characterization of Alloy Semiconductors.- Electrical Properties of DX Center in Selectively Doped AlGaAs/GaAs Heterostructure.- 2: Silicon.- Point Defects and Impurities in Silicon Crystals.- The Behavior of Point Defects in Silicon Crystals.- Point Defects and Stacking Fault Growth in Silicon.- The Characteristics of Nitrogen in Silicon Crystals.- Oxygen in Silicon.- On the Formation Process of Thermal Donors in Czochralski-Grown Silicon Crystal.- Interaction of Dislocations with Impurities in Silicon.- Author Index.