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Fundamentals of Silicon Carbide Technology – Growth, Characterization, Devices, and Applications de T Kimoto

Fundamentals of Silicon Carbide Technology – Growth, Characterization, Devices, and Applications: IEEE Press

Autor T Kimoto
en Limba Engleză Hardback – 20 noi 2014
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001.
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Specificații

ISBN-13: 9781118313527
ISBN-10: 1118313526
Pagini: 560
Dimensiuni: 177 x 253 x 43 mm
Greutate: 0.98 kg
Editura: Wiley
Seria IEEE Press

Locul publicării:Singapore, Singapore

Public țintă

P&R Tier 2
Primary: Graduate students and researchers in semiconductor devices, sensor design, high temperature electronics and power electronics, electronic material properties, and crystal growth.
Secondary: Application engineers and product managers in semiconductor and power electronics companies working in areas like power supply design, converter and inverter design, battery management, power system applications, transportation, electric vehicles, locomotive, aviation, smart grid technology.

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