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Emerging Non-Volatile Memories de Seungbum Hong

Emerging Non-Volatile Memories

Editat de Seungbum Hong, Orlando Auciello, Dirk Wouters
en Limba Engleză Paperback – 22 sep 2016
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.
This book also:
Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others.
Provides an overview of non-volatile memory fundamentals.
Broadens readers’ understanding of future trends in non-volatile memories.
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  Springer Us – 19 noi 2014 65134 lei  6-8 săpt.

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Specificații

ISBN-13: 9781489979308
ISBN-10: 1489979301
Pagini: 273
Ilustrații: XII, 273 p. 156 illus., 112 illus. in color.
Dimensiuni: 155 x 235 mm
Ediția:Softcover reprint of the original 1st ed. 2014
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States

Cuprins

Part I: Ferroic Memories.- Review of the Science and Technology for Low and High-density Non-volatile Ferroelectric Memories.- Hybrid CMOS/magnetic memories (MRAM) and logic circuits.- Emerging Multi-Ferroic Memories.- Part II: Resistance and Phase Change Memories.- Phase-Change Materials for Data Storage Applications.- Emerging Oxide Resistance Change Memories.- Oxide based memristive nanodevices.- Part III: Probe Memories.- Ferroelectric Probe Storage Devices.

Textul de pe ultima copertă

This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.
This book also:
Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others.
Provides an overview of non-volatile memory fundamentals.
Broadens readers’ understanding of future trends in non-volatile memories.

Caracteristici

Provides an overview of non-volatile memory fundamentals Covers key memory technologies Written by experts from both academia and industry