In the continued quest to obtain a better understanding of Electrostatic Discharge (ESD), this book aims to provide a clear insight into how changes in semiconductor technology over the last 15 years have influenced the ESD robustness of semiconductor components. ESD Physics and Devices offers an accessible introduction to the subject covering thermal, mechanical and electrostatic phenomena as well as the techniques from physics and mathematics that are useful for electro-thermal and failure physics.

• Addresses the physics of ESD protection in CMOS, silicon on insulator (SOI), and Silicon Germanium (SiGe), and future technologies from FinFETs to Carbon nano-tubes.

• Derives electro-thermal models from first principles highlighting early research, electro-thermal physical models and techniques.

• Introduces traditional and modern techniques to old problems in ESD, covering Boltzmann transforms and the Duhamel principle, as well as transmission line representations and transfer resistance models.

ESD Physics and Devices looks at the implications of ESD technology transitions for each physical region of a semiconductor device, region by region, from the substrate wafer to the interconnects. This book is a valuable reference for a range of advanced students, researchers and engineers in the fields of semiconductor process engineering, electrical engineering, materials science, mathematics and physics.