Fabrication, Properties and Applications of Low-Dimensional Semiconductors: NATO Science Partnership Subseries: 3, cartea 3
Editat de M. Balkanski, Ivan Yancheven Limba Engleză Hardback – 31 iul 1995
Audience: Undergraduates and graduates in electrical engineering and physics schools. Also for active scientists and engineers, updating their knowledge and understanding of the frontiers of the technology.
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Specificații
ISBN-13: 9780792335696
ISBN-10: 0792335694
Pagini: 457
Ilustrații: XIII, 457 p.
Dimensiuni: 170 x 244 x 27 mm
Greutate: 0.84 kg
Ediția:1995
Editura: SPRINGER NETHERLANDS
Colecția Springer
Seria NATO Science Partnership Subseries: 3
Locul publicării:Dordrecht, Netherlands
ISBN-10: 0792335694
Pagini: 457
Ilustrații: XIII, 457 p.
Dimensiuni: 170 x 244 x 27 mm
Greutate: 0.84 kg
Ediția:1995
Editura: SPRINGER NETHERLANDS
Colecția Springer
Seria NATO Science Partnership Subseries: 3
Locul publicării:Dordrecht, Netherlands
Public țintă
ResearchCuprins
Molecular Beam Epitaxy — Fundamental Growth Aspects and Selected Contributions to Physics and Applications of Low-Dimensional Semiconductor Structures.- Preparation of Quantum Structures: Quantum Well Infrared Detectors.- Heteroepitaxy of Layered III-VI Semiconductor GaSe On Si(111) 7x7 Surface.- Fabrication and Simulation of 0.1 ?m Pseudomorphic HEMTs. The Role of Partially Depleted p-Buffer.- Crystal Structure Investigation of PbO Thin Films Produced by Pulsed Laser Evaporation.- Modeling, Simulation and Characterization of the Metal-semiconductor Micro/Nanostructures.- Electronic States in Quantum Wells and Superlattices.- A New Method to Compute Subband Energy States of Low-Dimensional Systems by Using Feynman Path Integrals.- Bound-to-Continuum State Absorption Line Shape in Quantum Well Structures.- A Tight Binding Calculation of Transition Energies in Triangular Symmetrical Quantum Wells.- Separation of Variables in the One-Electron Schrödinger Equation for Quasi-One Dimensional Electron systems.- Transfer Matrix Based Calculations of Energy Levels in Strained In-GaAs/GaAs Multiple Quantum Wells.- Electrons and Holes in Quantum Structures.- Anomalous Evolution of Photoluminescence of Porous Silicon Layers at UV Irradiation.- Hot Hole p-Ge Lasers and Masers for Spectroscopy of Multiquantum-Well HeterostructuresGe/Gei-xSix.- New Experimental Approach to the Excess Carrier Transfer in Semiconductor Structures Based on Time Resolved Photovoltage.- Some Optical Properties of Semiconductor Quantum Well Heterostructurcs.- Size-Dependent Carrier Recombination in CdS Nanocrystals in Single-Electron and Plasma Regimes.- Quantum Hall Effect. Empirical Trends and Relations.- Persistent Currents in Mesoscopic Rings. Interference Effects in Disordered Multichain Rings inMagnetic Field.- Grating Assisted Electromagnetic Emission from Magnetoplasmon and Cyclotron Modes in Two-Dimensional Plasma Layer on GaAs. A Rigorous Theory.- Lattice Dynamics of HgBa2CuO3.- Advanced Optical Waveguide Structures.- Electrooptic Effect in Proton Exchanged LiNbO3 Waveguides.- Higher-Order Wave and Charge Confinement Effects in Semiconductor Double-Doped Optical Fibers: Quasi-Soliton Propagation and Bistability.- Waves in Gyrotropic Media.- Nonlinear Optical Devices.- Nonlinear Integrated Optics and All-Optical Waveguide Switching in Semiconductors.- Complete Switching With an Improvement in the Switching Intensity in AlGaAs Nonlinear Directional Couplers Using the Higher Order Orthogonal Modes.- A New Technique of Quantum Well Disordering and its Application to Integrated All-Optical Switches.