Ferroelectric Random Access Memories: Fundamentals and Applications: Topics in Applied Physics, cartea 93
Editat de Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimotoen Limba Engleză Hardback – 16 apr 2004
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Specificații
ISBN-13: 9783540407188
ISBN-10: 3540407189
Pagini: 310
Ilustrații: XIII, 291 p.
Dimensiuni: 155 x 235 x 24 mm
Greutate: 0.56 kg
Ediția:2004
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seria Topics in Applied Physics
Locul publicării:Berlin, Heidelberg, Germany
ISBN-10: 3540407189
Pagini: 310
Ilustrații: XIII, 291 p.
Dimensiuni: 155 x 235 x 24 mm
Greutate: 0.56 kg
Ediția:2004
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seria Topics in Applied Physics
Locul publicării:Berlin, Heidelberg, Germany
Public țintă
ResearchCuprins
Part I Ferroelectric Thin Films: Overview.- Novel Si-substituted Ferroelectric Films.- Static and Dynamic Properties of Domains.- Nanoscale Phenomena in Ferroelectric Thin Films.- Part II Deposition and Characterization Methods: Sputtering Techniques.- Chemical Approach Using Tailored Liquid Sources to Bi-based Layer-structured Perovskite Thin Films.- Recent Development of Ferroelectric Thin Films by MOCVD.- Materials Integration Strategies.- Characterization by Scanning Nonlinear Dielectric Microscopy.- Part III Fabrication Process and Circuit Design: Current Status of FeRAMs.- Operation Principle and Circuit Design Issues.- High Density Integration.- Testing and Reliability.- Part IV Advanced-Type Memories: Chain FeRAMs.- Capacitor-on-Metal/Via-stacked-Plug (CMVP) Memory Cell and Application to a Non-volatile SRAM.- FET-type FeRAMs.- Part V Applications and Future Prospects: Application to Future Information Technology World.- Subject Index.
Textul de pe ultima copertă
In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply.
Caracteristici
Presents the state of the art of ferroelectric RAM design Application oriented reviews by leading experts Up-to-date references Includes supplementary material: sn.pub/extras