Gallium Nitride Processing for Electronics, Sensors and Spintronics: Engineering Materials and Processes
Autor Stephen J. Pearton, Cammy R. Abernathy, Fan Renen Limba Engleză Paperback – 22 oct 2010
This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics.
Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Toate formatele și edițiile | Preț | Express |
---|---|---|
Paperback (1) | 921.55 lei 43-57 zile | |
SPRINGER LONDON – 22 oct 2010 | 921.55 lei 43-57 zile | |
Hardback (1) | 927.66 lei 43-57 zile | |
SPRINGER LONDON – 24 feb 2006 | 927.66 lei 43-57 zile |
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Specificații
ISBN-13: 9781849969659
ISBN-10: 1849969655
Pagini: 388
Ilustrații: XII, 380 p. 241 illus.
Dimensiuni: 155 x 235 x 20 mm
Greutate: 0.54 kg
Ediția:Softcover reprint of hardcover 1st ed. 2006
Editura: SPRINGER LONDON
Colecția Springer
Seria Engineering Materials and Processes
Locul publicării:London, United Kingdom
ISBN-10: 1849969655
Pagini: 388
Ilustrații: XII, 380 p. 241 illus.
Dimensiuni: 155 x 235 x 20 mm
Greutate: 0.54 kg
Ediția:Softcover reprint of hardcover 1st ed. 2006
Editura: SPRINGER LONDON
Colecția Springer
Seria Engineering Materials and Processes
Locul publicării:London, United Kingdom
Public țintă
ResearchCuprins
Advanced Processing of Gallium Nitride for Electronic Devices.- Dry Etching of Gallium Nitride and Related Materials.- Design and Fabrication of Gallium High-Power Rectifiers.- Chemical, Gas, Biological, and Pressure Sensing.- Nitride-Based Spintronics.- Novel Insulators for Gallium Nitride Metal-Oxide Semiconductor Field Effect Transistors and AlGaN-GaN Metal-Oxide Semiconductor High Electron Mobility Transistors.
Notă biografică
Stephen J Pearton and Cammy R. Abernathy are full professors in the Department of Materials Science and Engineering at the University of Florida, Gainesville. They are both leaders of research groups working in the processing and characterisation of semiconductor materials for high-speed device applications.
Fan Ren is a full professor in the university’s Department of Chemical Engineering, specialising in research into devices based on GaN wide-bandgap semiconductor materials.
Fan Ren is a full professor in the university’s Department of Chemical Engineering, specialising in research into devices based on GaN wide-bandgap semiconductor materials.
Textul de pe ultima copertă
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential.
Gallium Nitride Processing for Electronics, Sensors and Spintronics details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics.
Written by three of the world’s leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
The Engineering Materials and Processes series focuses on all forms of materials and the processes used to synthesise and formulate them as they relate to the various engineering disciplines.The series deals with a diverse range of materials: ceramics, metals (ferrous and non-ferrous), semiconductors, composites, polymers biomimetics, etc. Each monograph in the series is written by a specialist and demonstrates how enhancements in materials and the processes associated with them can improve performance in the field of engineering in which they are used.
Gallium Nitride Processing for Electronics, Sensors and Spintronics details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics.
Written by three of the world’s leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
The Engineering Materials and Processes series focuses on all forms of materials and the processes used to synthesise and formulate them as they relate to the various engineering disciplines.The series deals with a diverse range of materials: ceramics, metals (ferrous and non-ferrous), semiconductors, composites, polymers biomimetics, etc. Each monograph in the series is written by a specialist and demonstrates how enhancements in materials and the processes associated with them can improve performance in the field of engineering in which they are used.
Caracteristici
Only book to cover current research into IV-nitrides, their processing and use in novel applications in sensors and spintronics Includes supplementary material: sn.pub/extras