High-Linearity CMOS RF Front-End Circuits
Autor Yongwang Ding, Ramesh Harjanien Limba Engleză Paperback – 29 oct 2010
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Specificații
ISBN-13: 9781441936639
ISBN-10: 1441936637
Pagini: 128
Ilustrații: XVI, 128 p. 25 illus.
Dimensiuni: 155 x 235 x 8 mm
Greutate: 0.2 kg
Ediția:Softcover reprint of hardcover 1st ed. 2005
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States
ISBN-10: 1441936637
Pagini: 128
Ilustrații: XVI, 128 p. 25 illus.
Dimensiuni: 155 x 235 x 8 mm
Greutate: 0.2 kg
Ediția:Softcover reprint of hardcover 1st ed. 2005
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States
Public țintă
ResearchCuprins
RF Devices in CMOS Process.- Linear Transconductors in CMOS.- Linearization with Harmonic Cancellation.- LNA Design in CMOS.- Down-Conversion Mixer Design in CMOS.- Power Amplifier Design in CMOS.- Conclusions.
Textul de pe ultima copertă
The rapidly growing wireless communication industry is increasingly
demanding CMOS RF ICs due to their lower costs and higher integration
levels. The RF front-end of such wireless systems often needs to
handle widely disparate signal levels: small desired signals and
large interferers. Therefore, it becomes necessary to have highly
linear circuits to increase the system dynamic range. However,
traditional CMOS circuit designs are usually limited in either their
speed or in their linear performance. New techniques are needed to
meet the demand for high linearity at radio frequencies.
High-Linearity CMOS RF Front-End Circuits presents some unique
techniques to enhance the linearity of both the receiver and
transmitter. For example, using harmonic cancellation techniques, the
linearity of the receiver front-end can be increased by few tens of
dB with only minimal impact on the other circuit parameters. The new
parallel class A&B power amplifier can not only increase the
transmitter's output power in the linear range, but can also result
in significant savings in power consumption.
High-Linearity CMOS RF Front-End Circuits can be used as a textbook
for graduate courses in RF CMOS design and will also be useful as a reference for the
practicing engineer.
demanding CMOS RF ICs due to their lower costs and higher integration
levels. The RF front-end of such wireless systems often needs to
handle widely disparate signal levels: small desired signals and
large interferers. Therefore, it becomes necessary to have highly
linear circuits to increase the system dynamic range. However,
traditional CMOS circuit designs are usually limited in either their
speed or in their linear performance. New techniques are needed to
meet the demand for high linearity at radio frequencies.
High-Linearity CMOS RF Front-End Circuits presents some unique
techniques to enhance the linearity of both the receiver and
transmitter. For example, using harmonic cancellation techniques, the
linearity of the receiver front-end can be increased by few tens of
dB with only minimal impact on the other circuit parameters. The new
parallel class A&B power amplifier can not only increase the
transmitter's output power in the linear range, but can also result
in significant savings in power consumption.
High-Linearity CMOS RF Front-End Circuits can be used as a textbook
for graduate courses in RF CMOS design and will also be useful as a reference for the
practicing engineer.
Caracteristici
A new class of power amplifier is presented, as well as techniques to improve the performance of linear integrated circuits in CMOS at high frequencies