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Hot-Electron Transport in Semiconductors de L. Reggiani

Hot-Electron Transport in Semiconductors: Topics in Applied Physics, cartea 58

Editat de L. Reggiani Contribuţii de M. Asche, C. Canali, E. Constant, K Hess, G.J. Iafrate, S. Komijama, T. Kurosawa, T. Masumi, F. Nava, Y.K. Pozhela
en Limba Engleză Paperback – 23 aug 2014

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Specificații

ISBN-13: 9783662309353
ISBN-10: 3662309351
Pagini: 296
Ilustrații: XVI, 275 p. 26 illus.
Dimensiuni: 155 x 235 x 16 mm
Greutate: 0.42 kg
Ediția:Softcover reprint of the original 1st ed. 1985
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seria Topics in Applied Physics

Locul publicării:Berlin, Heidelberg, Germany

Public țintă

Research

Cuprins

General theory.- Drift velocity and diffusion coefficients from time-of-flight measurements.- Transport parameters from microwave conductivity and noise measurements.- Multivalued distributions of hot electrons between equivalent valleys.- Streaming motion of carriers in crossed electric and magnetic fields.- Hot electrons in semiconductor heterostructures and superlattices.- Non-steady-state carrier transport in semiconductors in perspective with submicrometer devices.