Lateral Power Transistors in Integrated Circuits: Power Systems
Autor Tobias Erlbacheren Limba Engleză Hardback – 24 oct 2014
In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced.
The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices.
In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated.
Toate formatele și edițiile | Preț | Express |
---|---|---|
Paperback (1) | 637.78 lei 6-8 săpt. | |
Springer International Publishing – 10 sep 2016 | 637.78 lei 6-8 săpt. | |
Hardback (1) | 643.99 lei 6-8 săpt. | |
Springer International Publishing – 24 oct 2014 | 643.99 lei 6-8 săpt. |
Din seria Power Systems
- 18% Preț: 953.13 lei
- 18% Preț: 783.98 lei
- 20% Preț: 1002.47 lei
- 18% Preț: 1021.86 lei
- 18% Preț: 897.65 lei
- 18% Preț: 788.72 lei
- 18% Preț: 734.27 lei
- 18% Preț: 902.36 lei
- Preț: 563.49 lei
- 18% Preț: 955.08 lei
- 18% Preț: 946.87 lei
- 18% Preț: 950.52 lei
- 18% Preț: 949.23 lei
- 15% Preț: 641.85 lei
- 18% Preț: 1116.26 lei
- 18% Preț: 961.10 lei
- 18% Preț: 1386.17 lei
- 15% Preț: 639.59 lei
- 15% Preț: 641.03 lei
- 18% Preț: 2497.51 lei
- 18% Preț: 957.62 lei
- 18% Preț: 1229.91 lei
- 15% Preț: 643.34 lei
- 18% Preț: 957.09 lei
- 18% Preț: 1231.47 lei
- 15% Preț: 698.30 lei
- 18% Preț: 953.20 lei
- 15% Preț: 640.88 lei
- 15% Preț: 634.18 lei
- 18% Preț: 955.08 lei
- 18% Preț: 1241.73 lei
- 18% Preț: 952.09 lei
- 18% Preț: 946.55 lei
- 18% Preț: 961.86 lei
- 18% Preț: 944.19 lei
- 18% Preț: 1110.72 lei
- 15% Preț: 642.03 lei
- 15% Preț: 636.12 lei
- 18% Preț: 1114.83 lei
- 15% Preț: 639.90 lei
- 18% Preț: 957.32 lei
- 18% Preț: 1235.57 lei
- 18% Preț: 959.19 lei
Preț: 643.99 lei
Preț vechi: 757.63 lei
-15% Nou
Puncte Express: 966
Preț estimativ în valută:
123.26€ • 128.20$ • 103.29£
123.26€ • 128.20$ • 103.29£
Carte tipărită la comandă
Livrare economică 13-27 martie
Preluare comenzi: 021 569.72.76
Specificații
ISBN-13: 9783319004990
ISBN-10: 3319004999
Pagini: 250
Ilustrații: XIX, 223 p. 157 illus.
Dimensiuni: 155 x 235 x 20 mm
Greutate: 0.52 kg
Ediția:2014
Editura: Springer International Publishing
Colecția Springer
Seria Power Systems
Locul publicării:Cham, Switzerland
ISBN-10: 3319004999
Pagini: 250
Ilustrații: XIX, 223 p. 157 illus.
Dimensiuni: 155 x 235 x 20 mm
Greutate: 0.52 kg
Ediția:2014
Editura: Springer International Publishing
Colecția Springer
Seria Power Systems
Locul publicării:Cham, Switzerland
Public țintă
ResearchCuprins
Introduction.- Literature Review.- Causes of food waste generation.- Methods of food waste reduction.- Research Methods.
Textul de pe ultima copertă
The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications.
In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced.
The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices.
In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated.
In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced.
The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices.
In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated.
Caracteristici
Presents advances in the development of novel lateral power transistors Summarizes the feasibility for different applications based on integration density, process complexity and cost and achievable energy efficiency Include the state-of-the-art concept of double-acting RESURF topologies Includes supplementary material: sn.pub/extras