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III-Nitride LEDs: From UV to Green: Advances in Optics and Optoelectronics

Autor Shengjun Zhou, Sheng Liu
en Limba Engleză Paperback – 28 mai 2023
This book highlights state-of-the-art in III-nitrides-based light-emitting diodes (LEDs). Motivated by the application prospects in lighting, high-resolution display, and health & medicine, the book systematically introduces the physical fundamentals, epitaxial growth, and device fabrications of III-nitride-based LEDs. Important topics including the structures of chips, device reliability and measurements and the advances in mini and micro LEDs are also discussed. The book is completed with a decade of research experience of the author’s team in the design and fabrication of III-nitrides-based LEDs, presenting the novel achievements in the stress control of the large mismatch heterostructures, defect formation and inhibition mechanism of the heteroepitaxial growth, LED epitaxial technologies, and the fabrication of high-efficient flip-chip LEDs. The book comprises of a valuable reference source for researchers and professionals engaged in the research and development of III-nitrides-based LEDs.

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Specificații

ISBN-13: 9789811904387
ISBN-10: 9811904383
Pagini: 239
Ilustrații: VIII, 239 p. 263 illus., 225 illus. in color.
Dimensiuni: 155 x 235 mm
Greutate: 0.35 kg
Ediția:1st ed. 2022
Editura: Springer Nature Singapore
Colecția Springer
Seria Advances in Optics and Optoelectronics

Locul publicării:Singapore, Singapore

Cuprins

Chapter 1. Physics of III-nitride light-emitting diodes. Chapter 2. Epitaxial growth of III-nitride LEDs.-
Chapter 3. High-efficiency top-emitting III-nitride LEDs.- Chapter 4. Flip-chip III-nitride LEDs.- Chapter 5. High-voltage and vertical LEDs.- Chapter 6. Device reliability and measurements.- Chapter 7. Mini/micro-LED.

Notă biografică

Dr. Shengjun Zhou
​Shengjun Zhou received his Ph.D. degree from Shanghai Jiao Tong University, China in 2011. He is currently full Professor at Wuhan University, China. He was Research Fellow at the University of Michigan, Ann Arbor during 2014 and 2015. His research focuses on the growth and device fabrication of GaN-based blue/green/ultraviolet LEDs. 

Sheng Liu received his Ph.D. degree from Stanford University, USA in 1992. He is currently full professor at Wuhan University. His current research interests focus on the areas of LEDs, MEMS, optoelectronics,sensor and electronics packaging. 

Textul de pe ultima copertă

This book highlights state-of-the-art in III-nitrides-based light-emitting diodes (LEDs). Motivated by the application prospects in lighting, high-resolution display, and health & medicine, the book systematically introduces the physical fundamentals, epitaxial growth, and device fabrications of III-nitride-based LEDs. Important topics including the structures of chips, device reliability and measurements and the advances in mini and micro LEDs are also discussed. The book is completed with a decade of research experience of the author’s team in the design and fabrication of III-nitrides-based LEDs, presenting the novel achievements in the stress control of the large mismatch heterostructures, defect formation and inhibition mechanism of the heteroepitaxial growth, LED epitaxial technologies, and the fabrication of high-efficient flip-chip LEDs. The book comprises of a valuable reference source for researchers and professionals engaged in the research and development of III-nitrides-based LEDs.


Caracteristici

Presents the state-of-the-art research on III-nitrides-based LEDs Covers the physical background, the epitaxial growth and device fabrication of III-nitrides-based LEDs A valuable source of reference for professionals and researchers in the field