Intersubband Transitions in Quantum Wells: Physics and Devices
Editat de Sheng S. Li, Yan-Kuin Suen Limba Engleză Hardback – 31 iul 1998
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Specificații
ISBN-13: 9780792381648
ISBN-10: 0792381645
Pagini: 214
Ilustrații: IX, 214 p. 10 illus.
Dimensiuni: 178 x 254 x 12 mm
Greutate: 0.4 kg
Ediția:1998
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States
ISBN-10: 0792381645
Pagini: 214
Ilustrații: IX, 214 p. 10 illus.
Dimensiuni: 178 x 254 x 12 mm
Greutate: 0.4 kg
Ediția:1998
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States
Public țintă
ResearchCuprins
1 Intersubb and Emission and Lasers.- Short (? ? 3.4 ?m) and Long (? ? 11.5 ?m) Wavelength RoomTemperature Quantum Cascade Lasers.- Quantum Fountain Intersubband Laser at 15.5 ?m Wavelength in GaAs/AlGaAs Quantum Wells.- Quantum Cascade Electroluminescence in the GaAs/AlGaAs Material System.- Phase-Matched Second-Harmonic and Cascade Laser Mid-IR Sources.- Mid-Infrared Intersubband Emission and Lasing in Optically Pumped Coupled Quantum Well Structures.- Intersubband Electroluminescence from GaAs/AlGaAs Triple Barrier and Quantum Cascade Structures.- 2 Quantum Well Infrared Photodetec Tor Physics.- Quantum Well Infrared Photodetectors: Device Physics and Light Coupling.- QWIP Performance and Polarization Selection Rule.- Electric Field Distribution and Low Power Nonlinear Photoresponse of Quantum Well Infrared Photodetectors.- Intersubband Transitions of Normal Incidence N-Type Direct Bandgap Quantum Well Structures.- Calculation and Photoresponse Measurements of the Long-Wavelength IR Absorption in P-Type GaAs/AlGaAs Quantum Wells and Type-II InAs/InGaSb Superlattices.- Optical Response Induced By Intersubband Transitions in Quantum Wells: The Role of Multiple Reflections.- The Nature of Unintentional Deep Level Clusters Responsible for Persistent Photoconductivity Effect in GaAs/AlGaAs MQ Photodetectors.- Lateral Physical Effects in Quantum Well Infrared Photodetectors.- 3 Quantum Well and Quantum dot Infrared Detectors.- Strain-Layer Quantum Well Infrared Photodetectors.- Normal Incidence Two Color Voltage Tunable InGaAs Quantum Well Infrared Photodetectors.- Corrugated Quantum Well Infrared Photodetectors and Transistors.- Normal-incidence P-type Si/SiGe Mid-infrared Detector with Background Limited Performance up to 85 K.- Far-Infrared (?c ? 28.6 ?m)GaAs/AlGaAs Quantum Well Photodetectors.- Quantum Dots Infrared Photodetctors (QDIPs).- Intraband Absorption Spectroscopy of Self-Assembled Quantum Dots.- Spectral Dynamics of the Intersubband Absorption in Quantum Well Structures After Ultrafast IR Excitation.- Energy Relaxation of Electrons in GaAs/AlGaAs Quantum Wells and Superlattices.- Modulated Resonant Raman Spectroscopy Induced by Intersubband Optical Excitation of the Quantum Well Bound and Continuum States.- THz Intersubband Lasers Using the Inverted Mass Scheme.- THz Time-Domain Spectroscopy of an Intersubband Plasmons.- Electrically Excited Terahertz Emission from Parabolic Quantum Wells.- Momentum Space Redistribution Time of Resonantly Photoexcited Excitons in GaAs/AlGaAs Superlattices.- 5 Qwip Focal Plane Arrays (FPAs) for IR Imaging.- 9 Micron Cutoff 640x486 GaAs/AlxGa1-xAs Quantum Well Infrared Photodetector Snap-Shot Camera.- System Considerations in the Design of QWIP-Based Thermal Imager.- Electrical and Optical Properties of 8 – 12 ?m GaAs/AlGaAs Quantum Well Infrared Photodetectors in 256 x 256 Focal Plane Arrays.