Lecture Notes on Principles of Plasma Processing
Autor Francis F. Chen, Jane P. Changen Limba Engleză Paperback – 31 ian 2003
This short book is ideal for new workers in the semiconductor industry who want to be brought up to speed with minimum effort. It is also suitable for Chemical Engineering students studying plasma processing of materials; Engineers, physicists, and technicians entering the semiconductor industry who want a quick overview of the use of plasmas in the industry.
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Specificații
ISBN-13: 9780306474972
ISBN-10: 0306474972
Pagini: 208
Ilustrații: XI, 208 p. 177 illus. With online files/update.
Dimensiuni: 210 x 279 x 12 mm
Greutate: 0.52 kg
Ediția:2003
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States
ISBN-10: 0306474972
Pagini: 208
Ilustrații: XI, 208 p. 177 illus. With online files/update.
Dimensiuni: 210 x 279 x 12 mm
Greutate: 0.52 kg
Ediția:2003
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States
Public țintă
ResearchCuprins
Al: Introduction to Plasma Science.- I. What is a plasma?.- II. Plasma fundamentals.- A2: Introduction to Gas Discharges.- III. Gas discharge fundamentals.- A3: Plasma Sources I.- IV. Introduction to plasma sources.- A4: Plasma Sources II.- V. RIE discharges.- A5: Plasma Sources III.- VI. ECR sources.- VII. Inductively coupled plasmas (ICPs).- A6: Plasma Sources IV.- VIII. Helicon wave sources and HDPs.- IX. Discharge equilibrium.- A7: Plasma Diagnostics.- X. Introduction.- XI. Remote diagnostics.- XII. Langmuir probes.- XIII. Other local diagnostics.- Bl: Overview of Plasma Processing in Microelectronics Fabrication.- I. Plasma processing.- II. Applications in Microelectronics.- B2: Kinetic Theory and Collisions.- I. Kinetic theory.- II. Practical gas kinetic models and macroscopic properties.- III. Collision dynamics.- B3: Atomic Collisions and Spectra.- I. Atomic energy levels.- II. Atomic collisions.- III. Elastic collisions.- IV. Inelastic collisions.- B4: Molecular Collisions and Spectra.- I. Molecular energy levels.- II. Selection rule for optical emission of molecules.- III. Electron collisions with molecules.- IV. Heavy particle collisions.- V. Gas phase kinetics.- B5: Plasma Diagnostics.- I. Optical emission spectroscopy.- II. Laser induced fluorescence.- III. Laser interferometry.- IV. Full-wafer interferometry.- V. Mass spectrometry.- B6: Plasma Surface Kinetics.- I. Plasma chemistry.- II. Surface reactions.- III. Loading.- IV. Selectivity.- V. Detailed reaction modeling.- B7: Feature Evolution and Modeling.- I. Fundamentals of feature evolution in plasma etching.- II. Predictive modeling.- III. Mechanisms of profile evolution.- IV. Profile simulation.- V. Plasma damage.- Epilogue: Current Problems in Semiconductor Processing.- I. Front-end challenges.- 1. High-k dielectrics.- 2. Metal gates.- II. Back-end challenges.- 1. Copper metalllization.- 2. Interlayer dielectrics (ILDs).- 3. Barrier materials.- III. Patterning nanometer features.- 1. E-beam.- 2. Resist trimming.- IV. Deep reactive etch for MEMS.- V. Plasma-induced damage.- VI. Species control in plasma reactors.