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Magnetism in Topological Insulators de Vladimir Litvinov

Magnetism in Topological Insulators

Autor Vladimir Litvinov
en Limba Engleză Hardback – 17 mai 2019
This book serves as a brief introduction to topological insulator physics and device applications. Particular attention is paid to the indirect exchange interaction mediated by near surface Dirac fermions and the spin texture this interaction favors. Along with useful information on semiconductor material systems, the book provides a theoretical background for most common concepts of TI physics.  Readers will benefit from up to date information and methods needed to start working in TI physics, theory, experiment and device applications.
  • Discusses inter-spin interaction via massless and massive Dirac excitations;
  • Includes coverage of near-surface spin texture of the magnetic atoms as related to their mutual positions as well to their positions with respect to top and bottom surfaces in thin TI film;
  • Describes non-RKKY oscillating inter-spin interaction as a signature of the topological state;
  • Explains the origin of the giant Rashba interaction at quantum phase transition in TI-conventional semiconductors.
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Specificații

ISBN-13: 9783030120528
ISBN-10: 303012052X
Pagini: 192
Ilustrații: XI, 158 p. 92 illus., 78 illus. in color.
Dimensiuni: 155 x 235 mm
Greutate: 0.42 kg
Ediția:1st ed. 2020
Editura: Springer International Publishing
Colecția Springer
Locul publicării:Cham, Switzerland

Cuprins

Introduction.- Energy bands in topological insulators.- Magnetic doping and ferromagnetic proximity effects.- Electrodynamics of topological phase.- Thin TI films.- Rashba interaction in topological insulators.- Spin-electron coupling in topological phase.- Dirac fermions mediated indirect exchange interaction.

Notă biografică

Vladimir Litvinov is a principal scientist at Sierra Nevada Corporation, Irvine, California, since 1999. He holds PhD and Doctor of Science degrees in physics from Chernivtsi National University (Ukraine) and the Institute of Physics, Estonian Academy of Sciences (since 1996 Institute of Physics, University of Tartu), respectively. From 1978 to 1996, he was a member and then head of the theoretical lab at the Institute of Materials Science, National Academy of Sciences of Ukraine. From 1996 to 1999, he was a senior research associate at the Center of Quantum Devices, Electrical and Computer Engineering Department, Northwestern University, Evanston, Illinois. His research interests include solid-state and semiconductor physics, optoelectronic devices, spintronics, and millimeter-wave scanning antennas.

Textul de pe ultima copertă

This book serves as a brief introduction to topological insulator physics and device applications. Particular attention is paid to the indirect exchange interaction mediated by near surface Dirac fermions and the spin texture this interaction favors. Along with useful information on semiconductor material systems, the book provides a theoretical background for most common concepts of TI physics.  Readers will benefit from up to date information and methods needed to start working in TI physics, theory, experiment and device applications.
  • Discusses inter-spin interaction via massless and massive Dirac excitations;
  • Includes coverage of near-surface spin texture of the magnetic atoms as related to their mutual positions as well to their positions with respect to top and bottom surfaces in thin TI film;
  • Describes non-RKKY oscillating inter-spin interaction as a signature of the topological state;
  • Explains the origin of the giant Rashba interaction at quantum phase transition in TI-conventional semiconductors.

Caracteristici

Discusses inter-spin interaction via massless and massive Dirac excitations Includes coverage of near-surface spin texture of the magnetic atoms as related to their mutual positions as well to their positions with respect to top and bottom surfaces in thin TI film Describes non-RKKY oscillating inter-spin interaction as a signature of the topological state Explains the origin of the giant Rashba interaction at quantum phase transition in TI-conventional semiconductors