Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices: Proceedings of a Conference held at the Mathematisches Forschungsinstitut, Oberwolfach, October 30 – November 5, 1988: International Series of Numerical Mathematics, cartea 93
Autor R. Banken Limba Engleză Paperback – 11 apr 2014
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Specificații
ISBN-13: 9783034857000
ISBN-10: 3034857004
Pagini: 316
Ilustrații: XVII, 297 p. 11 illus.
Dimensiuni: 170 x 244 x 17 mm
Greutate: 0.5 kg
Ediția:Softcover reprint of the original 1st ed. 1990
Editura: Birkhäuser Basel
Colecția Birkhäuser
Seria International Series of Numerical Mathematics
Locul publicării:Basel, Switzerland
ISBN-10: 3034857004
Pagini: 316
Ilustrații: XVII, 297 p. 11 illus.
Dimensiuni: 170 x 244 x 17 mm
Greutate: 0.5 kg
Ediția:Softcover reprint of the original 1st ed. 1990
Editura: Birkhäuser Basel
Colecția Birkhäuser
Seria International Series of Numerical Mathematics
Locul publicării:Basel, Switzerland
Public țintă
ResearchCuprins
Circuit Simulation.- Circuit Simulation in the Semiconductor Industry — State of the Art, Requirements and Future Development.- The Index of Differential-Algebraic Equations and its Significance for the Circuit Simulation.- Analysis and Numerical Treatment of Differential-Algebraic Systems.- Hopf Bifurcation in Differential Algebraic Equations and Applications to Circuit Simulation.- Row-Type Methods for the Integration of Electric Circuits.- Local Timestep Control for Simulating Electrical Circuits.- An improved numerical integration method in the circuit simulator SPICE2-S.- Increasing the Vector Length for Matrix Multiplication with Reduced Memory Access.- Device Simulation.- Semiconductor Equations and Analytical Models for Mosfets.- Recent Progress in Algorithms for Semiconductor Device Simulation.- A New Algorithmic Model for the Transient Semiconductor Problem.- Semiconductor Modelling Via the Boltzmann Equation.- A Numerical Method for the Simulation of Quantum Tunneling Phenomena in Solid State Semiconductors.- Modelling of Semiconductors Subject to Prescribed Currents.- Differential-Algebraic Problems and Semiconductor Device Simulation.- Algorithmic Aspects of the Hydrodynamic and Drift-Diffusion Device Models.- About the dependence of the convergence of Gummel’s algorithm and its linear variants on the device geometry.- Mixed FEM for ?u = ?u.- A Mixed Finite Element Method with Tetrahedral Elements for the Semiconductor Continuity Equations.- Local oxidation of silicon — a finite element approach.- Corner Singularities of Solutions of the Potential Equation in three Dimensions.