Mechanisms of Reactions of Organometallic Compounds with Surfaces: NATO Science Series B:, cartea 198
Editat de D.J. Cole-Hamilton, Jo Williamsen Limba Engleză Hardback – aug 1989
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Specificații
ISBN-13: 9780306432057
ISBN-10: 0306432056
Pagini: 300
Ilustrații: XIV, 300 p.
Dimensiuni: 178 x 254 x 19 mm
Greutate: 0.77 kg
Ediția:1989
Editura: Springer Us
Colecția Springer
Seria NATO Science Series B:
Locul publicării:New York, NY, United States
ISBN-10: 0306432056
Pagini: 300
Ilustrații: XIV, 300 p.
Dimensiuni: 178 x 254 x 19 mm
Greutate: 0.77 kg
Ediția:1989
Editura: Springer Us
Colecția Springer
Seria NATO Science Series B:
Locul publicării:New York, NY, United States
Public țintă
ResearchCuprins
Metallisation and Related Reactions.- New Directions in LCVD Metallisation Introduction and Conclusion.- Photoinduced Organometallic Processes in Semiconductor Surface Technology.- U.V. Excimer Laser Induced Photochemistry of Gaseous Organometallics for Surface Modification.- Laser-Induced Photodissociation of Al2(CH3)6: Gas-phase and Adsorbed Layer Dissociation Mechanisms for Al Film Growth.- Photonucleation and Photodeposition of Al on Si from Flowing Trimethylaluminium in Hydrogen.- An in-situ Study of Chemical Vapour Deposition of Triisobutylaluminum on Si(100).- An in-situ Study of the U.V. Photochemistry of Adsorbed TiCl4, by FTIR Spectroscopy.- Model Studies of LCVD of Transition Metals on Silicon: Surface Processes.- Excimer Laser Assisted Deposition of Cr on B Films.- Reactions of Group V Metal Hydrides with Surfaces.- Techniques for Studying Silicon Deposition.- Some Considerations of the Kinetics and Thermodynamics of CVD Processes.- The Chemistry of Silicon Deposition from Hydride Decomposition.- The Spectroscopy of Crystal Growth Surface Intermediates on Silicon.- Growth of Semi-Conductors by Gas Phase Movpe.- Growth of Semi-Conductors by Thermal MOVPE Introduction and Conclusions.- Reactions in OMVPE Growth of GaAs Determined Using labelling experiments.- Chemical Boundary Layers (MOCVD): The Return of the Stagnant Layer.- Monitoring Chemical Reactions in Metal-Organic Chemical Vapour Deposition (MOCVD).- Surface Studies at Atmospheric Pressure and Under UHV Conditions During Growth of GaAs.- Gas Phase and Surface Effects in the Thermal Decomposition of AsH3 and PH3 Studies by CARS..- In Situ Raman Studies of AsH3, and TMG Thermal Decomposition in GaAs MOVPE Conditions.- Surface vs Gasphase Processes in the MOCVD of GaAs..- Multiphoton Ionisation/Mass Spectrometnc Study of OMCVD Mechanisms Under Single Gas-Surface Collision Conditions.- CVD of SiC and A1N Thin Films Using Designed Organometallic Precursors.- Anisotropic Growth of GaAs in MOVPE.- Selective and Nonplanar Metal Organic Vapour Phase Epitaxy.- Photochemical Movpe Growth of Compound Semi-Conductors.- and Conclusions.- Mechanisms of the Photochemical Growth of Cadmium Mercury Telluride.- Alternative Growth Techniques to Atmospheric Pressure Movpe.- and Conclusions.- The Role of Surface and Gas Phase Reactions in Atomic Layer Epitaxy.- Gas Source Molecular Beam Epitaxy.- Heteroepitaxy of InSb by Metal Organic Magnetron Sputtering.