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Metal-Semiconductor Schottky Barrier Junctions and Their Applications

Editat de B.L. Sharma
en Limba Engleză Paperback – 25 noi 2012
The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal­ semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the larger interest, it was also considered necessary to have the different topics of Schottky barrier junctions written by experts.
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Specificații

ISBN-13: 9781468446579
ISBN-10: 1468446576
Pagini: 388
Ilustrații: 386 p. 38 illus.
Dimensiuni: 152 x 229 x 20 mm
Greutate: 0.52 kg
Ediția:Softcover reprint of the original 1st ed. 1984
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States

Public țintă

Research

Cuprins

1. Physics of Schottky Barrier Junctions.- 1. Introduction.- 2. Origins of Barrier Height.- 3. Measurement of Barrier Height.- 4. Results of Barrier Height Measurements.- 5. Capacitance-Voltage Characteristics.- 6. Current-Voltage Characteristics.- 7. Transient Behavior.- 8. Low-Resistance Schottky Barrier Contacts.- References.- 2. Interface Chemistry and Structure of Schottky Barrier Formation.- 1. Introduction.- 2. Perspectives on Schottky Barrier Formation.- 3. The Chemistry and Structure of the Interfacial Layer.- 4. Evolution of the Interfacial Layer.- 5. Formation of Interface States.- 6. Case Studies of the Chemistry and Structure of Schottky Barrier Formation.- 7. Summary.- References.- 3. Fabrication and Characterization of Metal-Semiconductor Schottky Barrier Junctions.- 1. Introduction.- 2. Selection of Semiconductor Materials.- 3. Metal-Semiconductor Systems.- 4. Design Considerations.- 5. Fabrication Technology.- 6. Characterization.- References.- 4. Schottky-Barrier-Type Optoelectronic Structures.- 1. Introduction.- 2. Barrier Formation in Schottky-Barrier-Type Junctions.- 3. Transport in Schottky-Barrier-Type Structures.- 4. Schottky-Barrier-Type Optoelectronic Structures.- 3. Summary.- References.- 5. Schottky Barrier Photodiodes.- 1. Introduction.- 2. General Parameters of Photodiodes.- 3. Selection of Materials.- 4. Fabrication Technology.- 5. Techniques for Evaluating Device Parameters.- 6. Applications.- 7. Conclusions.- References.- 6. Microwave Schottky Barrier Diodes.- 1. Introduction.- 2. Diode Design Considerations.- 3. Properties of Schottky Barrier Diodes.- 4. Microwave Performance.- 5. RF Pulse and CW Burnout.- 6. Conclusions.- References.- 7. Metal-Semiconductor Field Effect Transistors.- 1. Introduction.- 2. Small-Signal FET Theory.- 3. Design Parameters of a Low-Noise Device.- 4. Practical Small-Signal FET Fabrication Techniques.- 5. GaAs Power Field Effect Transistors.- 6. Conclusions.- References.- 8. Schottky Barrier Gate Charge-Coupled Devices.- 1. Introduction.- 2. Schottky Gate CCDs.- 3. Potential-Charge Relationships.- 4. Charge Storage Capacity.- 5. Charge Transfer.- 6. Input-Output Circuits.- 7. Schottky Gate Heterojunction CCDs.- 8. Experimental Results.- 9. Applications.- References.- 9. Schottky Barriers on Amorphous Si and their Applications.- 1. Introduction.- 2. Properties of Amorphous Si.- 3. The Schottky Barrier on ?-Si:H.- 4. Interface Kinetics and Its Effect on the Schottky Barrier.- 5. Applications.- 6. Concluding Remarks.- References.