Metallization and Metal-Semiconductor Interfaces: NATO Science Series B:, cartea 195
Editat de Inder P. Batraen Limba Engleză Paperback – 23 noi 2011
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Specificații
ISBN-13: 9781461280866
ISBN-10: 1461280869
Pagini: 524
Ilustrații: 522 p.
Dimensiuni: 170 x 244 x 28 mm
Greutate: 0.83 kg
Ediția:Softcover reprint of the original 1st ed. 1989
Editura: Springer Us
Colecția Springer
Seria NATO Science Series B:
Locul publicării:New York, NY, United States
ISBN-10: 1461280869
Pagini: 524
Ilustrații: 522 p.
Dimensiuni: 170 x 244 x 28 mm
Greutate: 0.83 kg
Ediția:Softcover reprint of the original 1st ed. 1989
Editura: Springer Us
Colecția Springer
Seria NATO Science Series B:
Locul publicării:New York, NY, United States
Public țintă
ResearchCuprins
to Metallization and Metal-Semiconductor Interfaces.- GENERAL SCHOTTKY BARRIER MECHANISMS.- Mechanisms of Barrier Formation in Schottky Contacts.- The Role of Defects and Metal States at the Metal-Semiconc uctor Interface.- Metallization, Bonding and Energetics of Ordered Phases of A1 on Si(l 11).- DEFECTS AT METAL-SEMICONDUCTOR CONTACTS.- Factors Influencing Electrical Barriers at Metal-Semiconductor Interfaces: Gold and Antimony on Indium Phosphide and Cadmium Telluride.- Deep Levels and Band Bending at Metal-Semiconductor Interfaces.- Influence of the Atomic Scale Roughness of a Clean Si Surface on the Interface Formation with Metals.- ?-Doping Layers. The Shaping Of Barrier Potentials By Planar Doping.- TEMPERATURE DEPENDENT METALLIZATION STUDIES.- Disruption, Metallization, and Electrical Properties of Metal GaAs and InP Semiconductor Interfaces.- Metal-GaAs(l 10) Interfaces formed at Low Temperature: from Adsorbate- to Metal-Induced Gap States.- Thermal Effects in Silicon-Metal Interface Formation: A Photoemission Study of Si/Gd and Si/Yb.- SILICON-SILICIDE INTERFACES.- Structures and Electronic Properties of Epitaxial Silicon-Silicide Interfaces.- Calculated Electronic Structures and Schottky Barrier Heights of (111) NiS22/Si A- and B- Type Interfaces.- Electrical (Characterization of Interface States at Schottky Contacts and MIS Tunnel Diodes.- BAND OFFSETS AND BARRIERS.- Relation Between Schottky Barrier Heights, Band Offsets and the Energy Levels of Transition Metal Impurities.- Screening Near Semiconductor Heterojunctions and Valence Band Offsets.- METALLIZATION REVIEW.- The Theory of Schottky Barriers: Controversy or Consensus?.- Metallization of Semiconductor Surfaces as a Function of Coverages.- APPLICATIONS OF TUNNELING TO METAL-SEMICONDUCTORINTERFACES.- Fermi-Level Pinning by Oxygen and Antimony Adsorbates on the GaAs(l 10) Surface by Scanning Tunneling Spectroscopy.- Initial Stages of Metal-Semiconductor Interface Formation.- Tunneling Spectroscopy and Potentiometry on Cleaved (Al)( jaAs Multilayers.- ALKALI METALS-SEMICONDUCTORS INTERFACES.- Metallization of Metal-Semiconductor Interfaces.- Electronic Structure and Excitations of Metal Overlayer on Semiconductor Surfaces.- Alkali-Metal Overlayers on Silicon Surfaces.- Present Understanding of a Model Metal/Semiconductor Junction: K/Si(001)2x1.- Inverse-Photoemission Studies of Clean and Metal-Covered Semiconductor Surfaces.- Influence of Overlayer Metallization on Schottky-Barrier Formation.- On the Formation of Metal-Semiconductor Interface: The Case of K on GaAs(l 10).- A Theoretical Study of Na Overlayers on the GaAs(l 10) Surface.- Electronic and Structural Properties and Schottky Barrier Formation of Alkali Metal-Semiconductor Interfaces.- Adsorption of Cs on Hydrogenated W(110) Surfaces.- Participants.