Metallization and Metal-Semiconductor Interfaces: NATO Science Series B:, cartea 195
Editat de Inder P. Batraen Limba Engleză Paperback – 23 noi 2011
Din seria NATO Science Series B:
- 5% Preț: 369.41 lei
- 5% Preț: 363.11 lei
- 5% Preț: 708.71 lei
- 18% Preț: 1382.27 lei
- 5% Preț: 367.08 lei
- 5% Preț: 711.60 lei
- Preț: 385.22 lei
- 5% Preț: 1420.60 lei
- 5% Preț: 374.24 lei
- 5% Preț: 1085.14 lei
- 5% Preț: 699.74 lei
- 5% Preț: 1390.20 lei
- 18% Preț: 941.29 lei
- 5% Preț: 711.04 lei
- 5% Preț: 715.20 lei
- 5% Preț: 1098.59 lei
- 5% Preț: 1405.66 lei
- 5% Preț: 360.41 lei
- 5% Preț: 1097.38 lei
- 5% Preț: 1087.66 lei
- 5% Preț: 1089.10 lei
- 5% Preț: 1079.95 lei
- 5% Preț: 703.67 lei
- 5% Preț: 1404.59 lei
- 5% Preț: 1970.65 lei
- 5% Preț: 712.51 lei
- 5% Preț: 1414.09 lei
- 5% Preț: 1090.53 lei
- 5% Preț: 1390.76 lei
- 5% Preț: 1269.22 lei
- 5% Preț: 1012.14 lei
- 5% Preț: 381.61 lei
- 5% Preț: 1085.85 lei
- Preț: 377.51 lei
- 5% Preț: 706.36 lei
- 5% Preț: 1094.85 lei
- 5% Preț: 366.74 lei
- 5% Preț: 1090.01 lei
- 5% Preț: 1089.10 lei
- 5% Preț: 1276.08 lei
- 5% Preț: 1104.92 lei
- 5% Preț: 706.55 lei
- 5% Preț: 1921.58 lei
- 5% Preț: 709.25 lei
Preț: 644.10 lei
Preț vechi: 757.76 lei
-15% Nou
Puncte Express: 966
Preț estimativ în valută:
123.30€ • 126.81$ • 102.29£
123.30€ • 126.81$ • 102.29£
Carte tipărită la comandă
Livrare economică 17 februarie-03 martie
Preluare comenzi: 021 569.72.76
Specificații
ISBN-13: 9781461280866
ISBN-10: 1461280869
Pagini: 524
Ilustrații: 522 p.
Dimensiuni: 170 x 244 x 28 mm
Greutate: 0.83 kg
Ediția:Softcover reprint of the original 1st ed. 1989
Editura: Springer Us
Colecția Springer
Seria NATO Science Series B:
Locul publicării:New York, NY, United States
ISBN-10: 1461280869
Pagini: 524
Ilustrații: 522 p.
Dimensiuni: 170 x 244 x 28 mm
Greutate: 0.83 kg
Ediția:Softcover reprint of the original 1st ed. 1989
Editura: Springer Us
Colecția Springer
Seria NATO Science Series B:
Locul publicării:New York, NY, United States
Public țintă
ResearchCuprins
to Metallization and Metal-Semiconductor Interfaces.- GENERAL SCHOTTKY BARRIER MECHANISMS.- Mechanisms of Barrier Formation in Schottky Contacts.- The Role of Defects and Metal States at the Metal-Semiconc uctor Interface.- Metallization, Bonding and Energetics of Ordered Phases of A1 on Si(l 11).- DEFECTS AT METAL-SEMICONDUCTOR CONTACTS.- Factors Influencing Electrical Barriers at Metal-Semiconductor Interfaces: Gold and Antimony on Indium Phosphide and Cadmium Telluride.- Deep Levels and Band Bending at Metal-Semiconductor Interfaces.- Influence of the Atomic Scale Roughness of a Clean Si Surface on the Interface Formation with Metals.- ?-Doping Layers. The Shaping Of Barrier Potentials By Planar Doping.- TEMPERATURE DEPENDENT METALLIZATION STUDIES.- Disruption, Metallization, and Electrical Properties of Metal GaAs and InP Semiconductor Interfaces.- Metal-GaAs(l 10) Interfaces formed at Low Temperature: from Adsorbate- to Metal-Induced Gap States.- Thermal Effects in Silicon-Metal Interface Formation: A Photoemission Study of Si/Gd and Si/Yb.- SILICON-SILICIDE INTERFACES.- Structures and Electronic Properties of Epitaxial Silicon-Silicide Interfaces.- Calculated Electronic Structures and Schottky Barrier Heights of (111) NiS22/Si A- and B- Type Interfaces.- Electrical (Characterization of Interface States at Schottky Contacts and MIS Tunnel Diodes.- BAND OFFSETS AND BARRIERS.- Relation Between Schottky Barrier Heights, Band Offsets and the Energy Levels of Transition Metal Impurities.- Screening Near Semiconductor Heterojunctions and Valence Band Offsets.- METALLIZATION REVIEW.- The Theory of Schottky Barriers: Controversy or Consensus?.- Metallization of Semiconductor Surfaces as a Function of Coverages.- APPLICATIONS OF TUNNELING TO METAL-SEMICONDUCTORINTERFACES.- Fermi-Level Pinning by Oxygen and Antimony Adsorbates on the GaAs(l 10) Surface by Scanning Tunneling Spectroscopy.- Initial Stages of Metal-Semiconductor Interface Formation.- Tunneling Spectroscopy and Potentiometry on Cleaved (Al)( jaAs Multilayers.- ALKALI METALS-SEMICONDUCTORS INTERFACES.- Metallization of Metal-Semiconductor Interfaces.- Electronic Structure and Excitations of Metal Overlayer on Semiconductor Surfaces.- Alkali-Metal Overlayers on Silicon Surfaces.- Present Understanding of a Model Metal/Semiconductor Junction: K/Si(001)2x1.- Inverse-Photoemission Studies of Clean and Metal-Covered Semiconductor Surfaces.- Influence of Overlayer Metallization on Schottky-Barrier Formation.- On the Formation of Metal-Semiconductor Interface: The Case of K on GaAs(l 10).- A Theoretical Study of Na Overlayers on the GaAs(l 10) Surface.- Electronic and Structural Properties and Schottky Barrier Formation of Alkali Metal-Semiconductor Interfaces.- Adsorption of Cs on Hydrogenated W(110) Surfaces.- Participants.