Microscopy of Semiconducting Materials 1987, Proceedings of the Institute of Physics Conference, Oxford University, April 1987
Autor A. G. Cullisen Limba Engleză Hardback – oct 1987
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Specificații
ISBN-13: 9780854981786
ISBN-10: 0854981780
Pagini: 820
Dimensiuni: 174 x 246 x 43 mm
Greutate: 1.47 kg
Ediția:1
Editura: CRC Press
Colecția CRC Press
ISBN-10: 0854981780
Pagini: 820
Dimensiuni: 174 x 246 x 43 mm
Greutate: 1.47 kg
Ediția:1
Editura: CRC Press
Colecția CRC Press
Public țintă
ProfessionalCuprins
High resolution microscopy (9 papers). Epitaxial layers (21 papers). Quantum wells and superlattices (11 papers). Properties of dislocations (5 papers). Device silicon and dielectric structures (24 papers). Silicides and contacts (5 papers). Device testing (6 papers). X-ray techniques (5 papers). Microanalysis (6 papers). Advanced scanning microscopy techniques (17 papers). Bulk gallium arsenide and other compounds (15 papers). Author index. Subject index.
Notă biografică
A. G. Cullis (Author) , P. D. Augustus (Volume editor)
Descriere
Microscopy of Semiconducting Materials 1987 highlights the progress that is being made in semiconductor microscopy, primarily in electron probe methods as well as in light optical and ion scattering techniques. The book covers the state of the art, with sections on high resolution microscopy, epitaxial layers, quantum wells and superlattices, bulk gallium arsenide and other compounds, properties of dislocations, device silicon and dielectric structures, silicides and contacts, device testing, x-ray techniques, microanalysis, and advanced scanning microscopy techniques.