Microscopy of Semiconducting Materials: 1999 Proceedings of the Institute of Physics Conference held 22-25 March 1999, University of Oxford, UK: Institute of Physics Conference Series
Editat de A. G. Cullis, R Beanlanden Limba Engleză Hardback – 2000
This volume provides an authoritative reference for all academics and researchers in materials science, electrical and electronic engineering and instrumentation, and condensed matter physics.
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Specificații
ISBN-13: 9780750306508
ISBN-10: 0750306505
Pagini: 772
Dimensiuni: 156 x 234 x 48 mm
Greutate: 1.43 kg
Ediția:1
Editura: CRC Press
Colecția CRC Press
Seria Institute of Physics Conference Series
ISBN-10: 0750306505
Pagini: 772
Dimensiuni: 156 x 234 x 48 mm
Greutate: 1.43 kg
Ediția:1
Editura: CRC Press
Colecția CRC Press
Seria Institute of Physics Conference Series
Public țintă
ProfessionalCuprins
High resolution microscopy and microanalysis (10 papers). Dislocations and boundaries (9 papers). Self-organized and quantum domain structures (14 papers) . Epitaxy-growth phenomena (22 papers). Epitaxy-defect formation (16 papers). Epitaxy-wide band-gap nitrides (20 papers). Processed silicon and related materials (24 papers). Metallization, silicides and contacts (9 papers). Device studies and specimen preparation (7 papers). Scanning probe microscopy (6 papers). Advanced scanning electron and optical microscopy (20 papers).
Descriere
Microscopy of Semiconducting Materials provides an overview of advances in semiconductor studies using microscopy. This authoritative reference explores the use of transmission and scanning electron microscopy, ultrafine electron probes, and EELS to investigate semiconducting structures. It also covers specimen preparation using focused ion beam milling and advances in microscopy techniques using different types of scanning probes, such as AFM, STM, and SCM. In addition, the volume discusses a range of materials, from finished devices to partly processed materials and structures, including nanoscale wires and dots.