Microwave Electronic Devices: Microwave and RF Techniques and Applications, cartea 10
Autor T.G. Roeren Limba Engleză Paperback – 30 sep 1994
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Specificații
ISBN-13: 9780412482007
ISBN-10: 0412482002
Pagini: 340
Ilustrații: XIV, 340 p.
Dimensiuni: 155 x 235 x 20 mm
Greutate: 0.51 kg
Ediția:Softcover reprint of the original 1st ed. 1994
Editura: Springer Us
Colecția Springer
Seria Microwave and RF Techniques and Applications
Locul publicării:New York, NY, United States
ISBN-10: 0412482002
Pagini: 340
Ilustrații: XIV, 340 p.
Dimensiuni: 155 x 235 x 20 mm
Greutate: 0.51 kg
Ediția:Softcover reprint of the original 1st ed. 1994
Editura: Springer Us
Colecția Springer
Seria Microwave and RF Techniques and Applications
Locul publicării:New York, NY, United States
Public țintă
ResearchCuprins
1 History.- 1.1.- 1.2 Electron tubes.- 1.3 Semiconductors: passive devices.- 1.4 Semiconductors: active diodes.- 1.5 Microwave transistors.- 1.6 Microwave integrated circuits.- References.- 2 Vacuum electron devices.- 2.1 Introduction.- 2.2 Microwave triodes.- 2.3 The klystron.- 2.4 Traveling wave tubes.- 2.5 The magnetron.- 2.6 Tube technology.- 2.7 Vacuum microelectronics.- Appendix 2.A Ramo's theorem and transit-time effects.- Appendix 2.B Large-signal theory of the klystron.- Appendix 2.C Theory of the reflex klystron.- References.- Further reading.- Problems.- 3 Semiconductor materials.- 3.1 A very brief review of basic semiconductor physics.- 3.2 Important bulk material properties.- 3.3 Heterojunctions, quantum wells.- 3.4 Technology of III-V semiconductors.- References.- Further reading.- Problems.- 4 Carrier transport and noise in devices.- 4.1 Device models.- 4.2 Physical modeling.- 4.3 Equivalent network models.- 4.4 Noise.- References.- Further reading.- Problems.- 5 Diodes.- 5.1 Introduction.- 5.2 p-n Junctions.- 5.3 Schottky diodes.- 5.4 Transferred electron diodes.- 5.5 Punch-through and bulk barrier diodes.- 5.6 Heterojunction and quantum well diodes.- 5.7 Superconducting diodes.- 5.8 Negative-resistance Diodes.- References.- Further reading.- Problems.- 6 Transistors.- 6.1 Silicon bipolar transistors.- 6.2 Heterojunction bipolar transistors.- 6.3 Field effect transistors: GaAs metal semiconductor field effect transistor.- 6.4 Field effect transistors: high electron mobility transistor.- 6.5 Noise of MESFETs and HEMTs.- 6.6 Field effect transistors: Si MOSFET.- 6.7 Other heterojunction FETs: MISFET and SISFET.- 6.8 Transistor packaging.- References.- Further reading.- Problems.- 7 Transmission lines and microwave circuits.- 7.1 Transmission line theory.-7.2 Microstrip lines.- 7.3 Other planar waveguides.- 7.4 Microwave networks.- 7.5 Microwave measurements.- References.- Further reading.- Problems.- 8 Detection, modulation and frequency conversion.- 8.1 Detection and mixing.- 8.2 Modulation, switching and control.- 8.3 Frequency multiplication.- References.- Further reading.- Problems.- 9 Amplifiers.- 9.1 Introduction.- 9.3 Transmission amplifiers.- 9.4 Amplification and stability.- 9.5 Amplifier noise.- 9.6 Power amplifiers.- 9.7 Microwave masers.- References.- Further reading.- 10 Oscillators.- 10.1 Oscillator circuit theory.- 10.2 Stability.- 10.3 Modulation and noise.- 10.4 Resonators.- 10.5 Diode oscillators.- 10.6 Transistor oscillators.- References.- Further reading.- 11 Monolithic microwave integrated circuits.- 11.1 Introduction.- 11.2 Bipolar technologies.- 11.3 GaAs FET technologies.- 11.4 GaAs logic families.- 11.5 Superconductive technologies.- 11.6 Integrated circuit packaging.- References.- Further reading.
Recenzii
`This is solid underpinning knowledge for undergraduates supported by copious references and pointers to further reading.'
Electrotechnology
Electrotechnology