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Molecular Beam Epitaxy: Applications to Key Materials

Autor Robin F.C. Farrow
en Limba Engleză Hardback – 30 dec 1995
In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
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Specificații

ISBN-13: 9780815513711
ISBN-10: 0815513712
Pagini: 792
Dimensiuni: 152 x 229 x 43 mm
Greutate: 1.22 kg
Ediția:New.
Editura: ELSEVIER SCIENCE

Public țintă

Engineers and technologists in the semiconductor, optoelectronic, optics, cutting tool, refractory fibers, filter and other industries.

Cuprins

The Technology and Design of Molecular Beam Epitaxy SystemsMolecular Beam Epitaxy of High-Quality GaAs and AlGaAsGas-Source Molecular Beam Epitaxy: GaxIn1-xAs1-yPy/InP MBE with Non-elemental Sources. Heterostructures and Device PropertiesMolecular Beam Epitaxy of Wide Gap II-VI Semiconductor HeterostructuresElemental Semiconductor HeterostructuresùGrowth, Properties, and ApplicationsMBE Growth of High Tc SuperconductorsMBE Growth of Artificially-Layered Magnetic Metal StructuresReflection High Energy Electron Diffraction Studies of the Dynamics of Molecular Beam EpitaxyAcknowledgmentsAppendix: Two-Level DiffractionReferencesIndex