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MOSFETs

Autor Noah T. Andre, Lucas M. Simon
en Limba Engleză Hardback – 30 noi 2008
The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material, and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET. The width of the channel, which determines how well the device conducts, is controlled by an electrode called the gate, separated from channel by a thin layer of oxide insulation. The insulation keeps current from flowing between the gate and channel. MOSFETs are useful for high-speed switching applications and also on integrated circuits in computers.
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Specificații

ISBN-13: 9781604567625
ISBN-10: 1604567627
Pagini: 454
Ilustrații: tables, charts & illus
Dimensiuni: 188 x 259 x 33 mm
Greutate: 1.12 kg
Editura: Nova Science Publishers Inc

Cuprins

Preface; Novel Device Concepts to Overcome MOSFET Limits; Efficient Parallel Monte Carlo Simulations Using Finite Element Tetrahedral Meshes for Novel Thin-Body MOSFET Architectures; Cryogenic Operation of Power MOSFETs; Redesign and Optimisation of Semiconductor Devices and Circuits; Thin and Ultra-Thin SiO2 Gate Oxide in Metal-Oxide-Semiconductor Structors Under Electrical Stresses: Reliability Predictions and Degradation Mechanism Models; Some Medical Applications of MOSFETs in Radiation Therapy: Surface Dose and Electron Backscatter Measurements with Monte Carlo Simulations; Surrounding-Gate MOSFETs for Transistor Scaling: Devices, Fabrication and Modelling; Quantum, Self Heating and Hot Electron Effects of Si-Based Double-Gate MOSFET and GaN-Based MOS-HFET ; Bulk FinFETs: Fabrication and Threshold Voltage ; Discussion on 1/f Noise in CMOS Transistors: Modelling- Simulation and Measurement Techniques; A Rigorous Analysis of the Parameters Which Govern the Silc in MOSFET's with Oxide Thickness in the 1-2 Nanometer Range; Analog and Digital Circuit Functionality Under the Influence of Gate Oxide Degradation and Breakdown; MOSFET's Programmable Conductance: The Way of VLSI Implementation for Emerging Applications from Biologically Plausible Neuromorphic Devices to Mobile Communications; Index.