Neutron Transmutation Doping in Semiconductors
Editat de J. Meeseen Limba Engleză Paperback – 26 noi 2012
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Specificații
ISBN-13: 9781468482515
ISBN-10: 1468482513
Pagini: 384
Ilustrații: X, 372 p.
Dimensiuni: 178 x 254 x 20 mm
Greutate: 0.66 kg
Ediția:Softcover reprint of the original 1st ed. 1979
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States
ISBN-10: 1468482513
Pagini: 384
Ilustrații: X, 372 p.
Dimensiuni: 178 x 254 x 20 mm
Greutate: 0.66 kg
Ediția:Softcover reprint of the original 1st ed. 1979
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States
Public țintă
ResearchCuprins
1: Introduction.- The NTD Process - A New Reactor Technology.- 2: Radioactivity And Radiation Protection.- Detection and Identification of Potential Impurities Activated by Neutron Irradiation of Czochralski Silicon.- Nuclear Transmutation Doping From the Viewpoint of Radioactivity Formation.- 3: Ntd Device Applications And Device Physics.- Application of NTD Silicon for Power Devices.- The Advantages of NTD Silicon for High Power Semiconductor Devices.- NTD Silicon on High Power Devices.- Role of Neutron Transmutation in the Development of High Sensitivity Extrinsic Silicon IR Detector Material.- Study of the Special Characteristics of the Breakdown Process in Silicon PN-Junctions.- Resistivity Fluctuations in Highly Compensated NTD Silicon.- Transistor Gain Trimming in I2L Integrated Circuits Using the NTD Process.- 4: Reactor Facilities For Transmutation Doping.- Determination of the Neutron Flux and Energy Spectrum and Calculation of Primary Recoil and Damage-Energy Distributions for Materials Irradiated in the Low Temperature Fast Neutron Facility in CP-5.- Neutron Doping of Silicon in the Harwell Research Reactors.- Silicon Irradiation Facilities at the NBS Reactor.- General Electric Test Reactor NTD Silicon Development Program.- An Automated Irradiation Facility for Neutron Doping of Large Silicon Ingots.- High Precision Irradiation Techniques for NTD Silicon at the University of Missouri Research Reactor.- A Computer Controlled Irradiation System for the University of Missouri Research Reactor.- 5: Basic Processes—Radiation Damage And Dopant Production.- Atomic Displacement Effects in Neutron Transmutation Doping.- The Minority Carrier Lifetime of Neutron Doped Silicon.- Electrical Property Studies of Neutron Transmutation Doped Silicon.- Defect AnnealingStudies in Neutron Transmutation Doped Silicon.- Isochronal Annealing of Resistivity in Float Zone and Czochralski NTD Silicon.- Electron Spin Resonance in NTD Silicon.- Defect Levels Controlling the Behavior of NTD Silicon During Annealing.- Residual Radioactivity Measurements for High Purity Silicon Irradiated by Pile Neutrons.- Magneto-Optical Study of Shallow Donors in Transmutation Doped GaAs.- Shallow Defect Levels in Neutron Irradiated Extrinsic P-Type Silicon.- Measurements of 3 1P Concentrations Produced by Neutron Transmutation Doping of Silicon.- 6: Summary Of The Conference.- “Pursuit of the Ultimate Junction”.- Participants.