Spontaneous Ordering in Semiconductor Alloys
Autor Sana E. Loue, Angelo Mascarenhasen Limba Engleză Hardback – 31 mar 2002
During the past two decades, significant progress has been made toward understanding the mechanisms that drive this phenomenon and the changes in physical properties that result from it. A variety of experimental techniques have been used to probe the phenomenon and several attempts made at providing theoretical models, both for the ordering mechanisms as well as electronic structure changes. The various chapters of this book provide a detailed account of these efforts during the past decade.
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Specificații
ISBN-13: 9780306467783
ISBN-10: 030646778X
Pagini: 474
Dimensiuni: 167 x 261 x 33 mm
Greutate: 1.15 kg
Ediția:New.
Editura: Kluwer Academic/Plenum Publishers
Locul publicării:Boston, MA, United States
ISBN-10: 030646778X
Pagini: 474
Dimensiuni: 167 x 261 x 33 mm
Greutate: 1.15 kg
Ediția:New.
Editura: Kluwer Academic/Plenum Publishers
Locul publicării:Boston, MA, United States
Public țintă
ResearchCuprins
1. Basic Aspects of Atomic Ordering in III-V Semiconductor Alloys; T. Suzuki. 2. The Nature and Origin of Atomic Ordering in Group III-V Antimonide Semiconductors Alloys; A.G. Norman. 3. Effects of the Surface on CuPt Ordering During OMVPE Growth; G.B. Stringfello. 4. X-Ray Diffraction Analysis of Ordering in Epitaxial III-B Alloys; R.L. Forrest. 5. Surface Morphology and Formation of Antiphase Boudaries in Ordered (GaIn)P-A TEM Study; T. Sass, I. Pietzonka. 6. X-Ray characterization of CuPt Ordered III-V Ternary Alloys; J. Li. 7. Diffraction and Imaging of Ordered Semiconductors; S.P. Ahrenkiel. 8. X-Ray Analysis of the Short-Range Order in the Ordered-Alloy Domains of Epitaxial (Ga,In)P Layers by DAFS of Superlattice Reflections; D.C. Meyer, K. Richter, G. Wagner, P. Paufler. 9. Ballistic Electron Emission Microscopy and Spectroscopy Study of Ordering-Induced Band Structure Effects in Ga0.52IN0.48P; M. Kozhevnikov, V. Narayanamurti. 10. The Physics of Tunable Disorder in Semiconductor Alloys; A. Mascarenhas, Y. Zhang. 11. Spectroscopic Study of the Interface and Band Alignment at the GaInP(Partially Ordered)/GaAs Heterojunction under High Pressure and High Magnetic Field; P.Y. Yu, G. Martinez, J. Zeman, K. Uchida. 12. Polarization Effects in the (Electro)absorption of Ordered GaInP and their Device Applications; P. Kiesel, T. Kippenberg, G.H. Döhler.