Cantitate/Preț
Produs

Survey of Semiconductor Physics: Volume II Barriers, Junctions, Surfaces, and Devices

Autor Karl W. Böer
en Limba Engleză Paperback – 6 noi 2012
Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a graduate level class had to be interwoven with others written in shorter, reference style. The pointers at the right-hand page header will assist in distinguishing the more diffi­ cult reference parts of the book (with the pointer to the right) from the more easy-to-read basic educational sections (with the pointer tending to the left).
Citește tot Restrânge

Preț: 49397 lei

Nou

Puncte Express: 741

Preț estimativ în valută:
9454 9820$ 7853£

Carte tipărită la comandă

Livrare economică 29 ianuarie-04 februarie 25

Preluare comenzi: 021 569.72.76

Specificații

ISBN-13: 9789401052931
ISBN-10: 940105293X
Pagini: 1540
Ilustrații: XCIV, 1442 p. In 2 volumes, not available separately.
Dimensiuni: 152 x 229 x 81 mm
Ediția:Softcover reprint of the original 1st ed. 1992
Editura: SPRINGER NETHERLANDS
Colecția Springer
Locul publicării:Dordrecht, Netherlands

Public țintă

Research

Cuprins

I: Surface Properties.- 1 Introduction.- 2 Crystal Surfaces, An Introduction.- 3 Surface Analysis.- 4 Surface Structures.- 5 Crystal Growth, Epitaxy.- 6 Phononic Effects at Surfaces.- 7 Electronic Surface and Interface States.- 8 Semiconductor Interfaces and Contacts.- 9 Electron Penetration through Surfaces.- 10 Photon Penetration through Surfaces.- 11 Surface Influence on Bulk Properties.- II: Space-Charge Effects in Semiconductors.- 12 Space Charges in Insulators.- 13 Creation of Space-Charge Regions in Solids.- 14 The Schottky Barrier.- 15 Minority Carriers.- 16 Minority Carrier Currents.- 17 Schottky Barrier in Two-Carrier Model.- 18 pn-Homojunctions.- 19 Carrier Velocity Limitation.- 20 Semiconductor Heterojunctions.- 21 The Photovoltaic Effect.- 22 The Schottky Barrier Photodiode.- 23 The pn-Junction with Light.- 24 The Heterojunction with Light.- 25 The pin Junction with Light.- 26 High-Field Domains.- 27 Current Channels.- III: Materials and Fabrication Technology.- 28 Purification of Semiconductor Materials.- 29 Crystallization and Device Shaping.- 30 Doping and Junction Formation.- 31 Electrodes.- 32 Integrated Circuit Processing.- IV: Semiconductor Devices.- 33 Schottky Barriers and Diodes.- 34 Solar Cells.- 35 Light Emitting Devices.- 36 Transistors and Multiterminal Devices.- 37 Semiconductors and Devices: An Epilogue.- V:.- Appendix Computation Routines and Tables.- A.1 Numerical Methods.- A.1.1 The Kutta-Merson Integration Routine.- A.1.1A Runge-Kutta Part.- A.1.1B Kutta-Merson Part.- A.1.2 The Finite Element Numerical Method.- A.1.3 The Pros and Cons of the Two Methods.- A.2 Some Mathematical Tools.- A.2.1 Series.- A.2.2 Coordinate Systems.- A.2.3 The Wave Equation.- A.3 List of Acronyms.- A.4 Symbols Used.- A.5 Important Derived Parameters.- A.6 Summary of Important Equations.- A.6.1 Space Charge Related.- A.6.1A Constant Space Charge Distributions.- A.6.1B Majority Carrier Injection (Space Charge Limited Current).- A.6.1C Classical Schottky Barrier.- A.6.1D Modified Schottky Barrier.- A.6.1E Two-Level Schottky Barriers.- A.6.1F Heterojunction Quasi-Schottky Barrier.- A.6.1G Quasi-Schottky Barrier with Interface Recombination.- A.6.1H Carrier Generation and Recombination.- A.6.1I Diffusion Currents.- A.6.1J Drift-Enhanced Diffusion Current.- A.6.1K Tunneling Current.- A.6.1L Majority Carrier Distribution Near Junction.- A.6.1M Carrier Velocity Saturation.- A.6.1N pn-Homojunctions.- A.6.1O Surface Recombination Current.- A.6.1P Surface Conditions with Light.- A.6.1Q pn-Junction with Light.- A.6.1R Classical Solar Cell Diode Model.- A.6.2 Vacuum Related.- A.6.3 Phonon Related.- A.6.4 Photon Related.- A.6.4A Reflection and Transmission of Light.- A.7 Tables.- Word Index.