Survey of Semiconductor Physics: Volume II Barriers, Junctions, Surfaces, and Devices
Autor Karl W. Böeren Limba Engleză Paperback – 6 noi 2012
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Specificații
ISBN-13: 9789401052931
ISBN-10: 940105293X
Pagini: 1540
Ilustrații: XCIV, 1442 p. In 2 volumes, not available separately.
Dimensiuni: 152 x 229 x 81 mm
Ediția:Softcover reprint of the original 1st ed. 1992
Editura: SPRINGER NETHERLANDS
Colecția Springer
Locul publicării:Dordrecht, Netherlands
ISBN-10: 940105293X
Pagini: 1540
Ilustrații: XCIV, 1442 p. In 2 volumes, not available separately.
Dimensiuni: 152 x 229 x 81 mm
Ediția:Softcover reprint of the original 1st ed. 1992
Editura: SPRINGER NETHERLANDS
Colecția Springer
Locul publicării:Dordrecht, Netherlands
Public țintă
ResearchCuprins
I: Surface Properties.- 1 Introduction.- 2 Crystal Surfaces, An Introduction.- 3 Surface Analysis.- 4 Surface Structures.- 5 Crystal Growth, Epitaxy.- 6 Phononic Effects at Surfaces.- 7 Electronic Surface and Interface States.- 8 Semiconductor Interfaces and Contacts.- 9 Electron Penetration through Surfaces.- 10 Photon Penetration through Surfaces.- 11 Surface Influence on Bulk Properties.- II: Space-Charge Effects in Semiconductors.- 12 Space Charges in Insulators.- 13 Creation of Space-Charge Regions in Solids.- 14 The Schottky Barrier.- 15 Minority Carriers.- 16 Minority Carrier Currents.- 17 Schottky Barrier in Two-Carrier Model.- 18 pn-Homojunctions.- 19 Carrier Velocity Limitation.- 20 Semiconductor Heterojunctions.- 21 The Photovoltaic Effect.- 22 The Schottky Barrier Photodiode.- 23 The pn-Junction with Light.- 24 The Heterojunction with Light.- 25 The pin Junction with Light.- 26 High-Field Domains.- 27 Current Channels.- III: Materials and Fabrication Technology.- 28 Purification of Semiconductor Materials.- 29 Crystallization and Device Shaping.- 30 Doping and Junction Formation.- 31 Electrodes.- 32 Integrated Circuit Processing.- IV: Semiconductor Devices.- 33 Schottky Barriers and Diodes.- 34 Solar Cells.- 35 Light Emitting Devices.- 36 Transistors and Multiterminal Devices.- 37 Semiconductors and Devices: An Epilogue.- V:.- Appendix Computation Routines and Tables.- A.1 Numerical Methods.- A.1.1 The Kutta-Merson Integration Routine.- A.1.1A Runge-Kutta Part.- A.1.1B Kutta-Merson Part.- A.1.2 The Finite Element Numerical Method.- A.1.3 The Pros and Cons of the Two Methods.- A.2 Some Mathematical Tools.- A.2.1 Series.- A.2.2 Coordinate Systems.- A.2.3 The Wave Equation.- A.3 List of Acronyms.- A.4 Symbols Used.- A.5 Important Derived Parameters.- A.6 Summary of Important Equations.- A.6.1 Space Charge Related.- A.6.1A Constant Space Charge Distributions.- A.6.1B Majority Carrier Injection (Space Charge Limited Current).- A.6.1C Classical Schottky Barrier.- A.6.1D Modified Schottky Barrier.- A.6.1E Two-Level Schottky Barriers.- A.6.1F Heterojunction Quasi-Schottky Barrier.- A.6.1G Quasi-Schottky Barrier with Interface Recombination.- A.6.1H Carrier Generation and Recombination.- A.6.1I Diffusion Currents.- A.6.1J Drift-Enhanced Diffusion Current.- A.6.1K Tunneling Current.- A.6.1L Majority Carrier Distribution Near Junction.- A.6.1M Carrier Velocity Saturation.- A.6.1N pn-Homojunctions.- A.6.1O Surface Recombination Current.- A.6.1P Surface Conditions with Light.- A.6.1Q pn-Junction with Light.- A.6.1R Classical Solar Cell Diode Model.- A.6.2 Vacuum Related.- A.6.3 Phonon Related.- A.6.4 Photon Related.- A.6.4A Reflection and Transmission of Light.- A.7 Tables.- Word Index.