The k p Method: Electronic Properties of Semiconductors
Autor Lok C. Lew Yan Voon, Morten Willatzenen Limba Engleză Hardback – 23 iun 2009
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Specificații
ISBN-13: 9783540928713
ISBN-10: 3540928715
Pagini: 468
Ilustrații: XI, 445 p. 50 illus.
Dimensiuni: 155 x 235 x 30 mm
Greutate: 0.83 kg
Ediția:2009
Editura: Springer Berlin, Heidelberg
Colecția Springer
Locul publicării:Berlin, Heidelberg, Germany
ISBN-10: 3540928715
Pagini: 468
Ilustrații: XI, 445 p. 50 illus.
Dimensiuni: 155 x 235 x 30 mm
Greutate: 0.83 kg
Ediția:2009
Editura: Springer Berlin, Heidelberg
Colecția Springer
Locul publicării:Berlin, Heidelberg, Germany
Public țintă
ResearchCuprins
I Homogeneous Crystals.- One-Band Model.- Perturbation Theory#x2014;Valence Band.- Perturbation Theory #x2013; Kane Models.- Method of Invariants.- Spin Splitting.- Strain.- II Nonperiodic Problem.- Shallow Impurity States.- Magnetic Effects.- Electric Field.- Excitons.- Heterostructures: Basic Formalism.- Heterostructures: Further Topics.- Conclusion.
Notă biografică
Dr. Lew Yan Voon has received recognitions for this teaching (e.g., advising awards, NSF CAREER award) and has taught the k.p method to MS students, PhD students and postdocs; this pedagogical experience has been invaluable for testing the manuscript as a textbook.
Textul de pe ultima copertă
This book presents a detailed exposition of the formalism and application of k.p theory for both bulk and nanostructured semiconductors. For bulk crystals, this is the first time all the major techniques for deriving the most popular Hamiltonians have been provided in one place. For nanostructures, this is the first time the Burt-Foreman theory has been made accessible. Thus, the reader will gain a clear understanding of the k.p method, will have an explicit listing of the various Hamiltonians in a consistent notation for their use, and a set of representative results. In addition, the reader can derive an excellent understanding of the electronic structure of semiconductors.
Caracteristici
For bulk crystals, this is the first time all the major techniques for deriving the most popular Hamiltonians have been provided in one place For nanostructures, this is the first time the Burt-Foreman theory has been made accessible Includes supplementary material: sn.pub/extras