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The Physics and Modeling of Mosfets: Surface-Potential Model HiSIM: International Series on Advances in Solid State Electronics and Technology (Unnumbered)

Autor Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki
en Limba Engleză Hardback – 31 mai 2008
Provides a description of the compact MOS transistor models for circuit simulation. This book considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.
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Specificații

ISBN-13: 9789812568649
ISBN-10: 9812568646
Pagini: 352
Dimensiuni: 152 x 229 x 25 mm
Greutate: 0.62 kg
Editura: World Scientific Publishing Company
Seria International Series on Advances in Solid State Electronics and Technology (Unnumbered)


Cuprins

Semiconductor Device Physics; Basic Compact Surface-Potential Model of the MOSFET; Advanced MOSFET Phenomena Modeling; Capacitances; Noise Models; Non-Quasi-Static (NQS) Model; Leakage Currents; Source/Bulk and Drain/Bulk Diode Models; Source/Drain Resistances; Effects of the Source/Drain Diffusion Length for Shallow Trench Isolation (STI) Technologies; Summary of Model Equations; Exclusion of Modeled Effects and Model Flags.